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Facile microwave-assisted synthesis of Klockmannite CuSe nanosheets and their exceptional electrical properties.

Liu YQ, Wang FX, Xiao Y, Peng HD, Zhong HJ, Liu ZH, Pan GB - Sci Rep (2014)

Bottom Line: This is ascribed to the quantum size effect of NS and the presence of Schottky barrier.In addition, the influence of the molar ratio of Cu(2+)/SeO2, reaction temperature, and reaction time on the growth of CuSe NSs is explored.The template effect of oleylamine and the intrinsic crystal nature of CuSe NS are proposed to account for the growth of hexagonal CuSe NSs.

View Article: PubMed Central - PubMed

Affiliation: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, P. R. China.

ABSTRACT
Klockmannite copper selenide nanosheets (CuSe NSs) are synthesized by a facile microwave-assisted method and fully characterized. The nanosheets have smooth surface and hexagonal shape. The lateral size is 200-500 nm × 400-800 nm and the thickness is 55 ± 20 nm. The current-voltage characteristics of CuSe NS films show unique Ohmic and high-conducting behaviors, comparable to the thermally-deposited gold electrode. The high electrical conductivity of CuSe NSs implies their promising applications in printed electronics and nanodevices. Moreover, the local electrical variation is observed, for the first time, within an individual CuSe NS at low bias voltages (0.1 ~ 3 V) by conductive atomic force microscopy (C-AFM). This is ascribed to the quantum size effect of NS and the presence of Schottky barrier. In addition, the influence of the molar ratio of Cu(2+)/SeO2, reaction temperature, and reaction time on the growth of CuSe NSs is explored. The template effect of oleylamine and the intrinsic crystal nature of CuSe NS are proposed to account for the growth of hexagonal CuSe NSs.

No MeSH data available.


Related in: MedlinePlus

(a) Schematic diagram of marked spots located in the surface of hexagonal crystal with the indexed facets. A represents fringe region, and B represents middle region. (b) I-V curves of two marked spots by C-AFM. The applied bias was swept from −1 to 1 V and reversely. (c–e) I-V curves of spot B by C-AFM. The applied bias voltages were 2 V (c), 3 V (d) and 4 V (e). (f) I-V curve of spot B by C-AFM. The applied bias voltages were reduced reversely to 1 V.
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f8: (a) Schematic diagram of marked spots located in the surface of hexagonal crystal with the indexed facets. A represents fringe region, and B represents middle region. (b) I-V curves of two marked spots by C-AFM. The applied bias was swept from −1 to 1 V and reversely. (c–e) I-V curves of spot B by C-AFM. The applied bias voltages were 2 V (c), 3 V (d) and 4 V (e). (f) I-V curve of spot B by C-AFM. The applied bias voltages were reduced reversely to 1 V.

Mentions: To reveal the local electrical variation more quantitatively, the I–V characteristics of two representative spots A and B on the surface of single CuSe NS are investigated (Fig. 8a). As a bias voltage varies from −1 V to 1 V and reversely, a linear and symmetric curve is observed for spot A, indicating a typical Ohmic behavior. An electric resistance on the order of 107 ohms chimed in with the inferior conductivity of NS film without pyridine-treatment. In contrast, no obvious I–V characteristics are observed for spot B (Fig. 8b). The different I-V characteristics for spots A and B confirms the local electrical variation of CuSe NS. However, as the bias voltage is up to 4 V, a nonlinear and almost symmetric I-V characteristics is obtained (Fig. 8c–e), similar to those of individual silver trimolybdate nanowire43, Sb2S3 nanowire44, and NH4V3O8 nanobelt45. The I–V characteristics for spot B kept similar semiconducting behavior while the bias voltage decreases back to 100 mV (Fig. 8f), where the electric resistance is close to that of spot A.


Facile microwave-assisted synthesis of Klockmannite CuSe nanosheets and their exceptional electrical properties.

Liu YQ, Wang FX, Xiao Y, Peng HD, Zhong HJ, Liu ZH, Pan GB - Sci Rep (2014)

(a) Schematic diagram of marked spots located in the surface of hexagonal crystal with the indexed facets. A represents fringe region, and B represents middle region. (b) I-V curves of two marked spots by C-AFM. The applied bias was swept from −1 to 1 V and reversely. (c–e) I-V curves of spot B by C-AFM. The applied bias voltages were 2 V (c), 3 V (d) and 4 V (e). (f) I-V curve of spot B by C-AFM. The applied bias voltages were reduced reversely to 1 V.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4126004&req=5

f8: (a) Schematic diagram of marked spots located in the surface of hexagonal crystal with the indexed facets. A represents fringe region, and B represents middle region. (b) I-V curves of two marked spots by C-AFM. The applied bias was swept from −1 to 1 V and reversely. (c–e) I-V curves of spot B by C-AFM. The applied bias voltages were 2 V (c), 3 V (d) and 4 V (e). (f) I-V curve of spot B by C-AFM. The applied bias voltages were reduced reversely to 1 V.
Mentions: To reveal the local electrical variation more quantitatively, the I–V characteristics of two representative spots A and B on the surface of single CuSe NS are investigated (Fig. 8a). As a bias voltage varies from −1 V to 1 V and reversely, a linear and symmetric curve is observed for spot A, indicating a typical Ohmic behavior. An electric resistance on the order of 107 ohms chimed in with the inferior conductivity of NS film without pyridine-treatment. In contrast, no obvious I–V characteristics are observed for spot B (Fig. 8b). The different I-V characteristics for spots A and B confirms the local electrical variation of CuSe NS. However, as the bias voltage is up to 4 V, a nonlinear and almost symmetric I-V characteristics is obtained (Fig. 8c–e), similar to those of individual silver trimolybdate nanowire43, Sb2S3 nanowire44, and NH4V3O8 nanobelt45. The I–V characteristics for spot B kept similar semiconducting behavior while the bias voltage decreases back to 100 mV (Fig. 8f), where the electric resistance is close to that of spot A.

Bottom Line: This is ascribed to the quantum size effect of NS and the presence of Schottky barrier.In addition, the influence of the molar ratio of Cu(2+)/SeO2, reaction temperature, and reaction time on the growth of CuSe NSs is explored.The template effect of oleylamine and the intrinsic crystal nature of CuSe NS are proposed to account for the growth of hexagonal CuSe NSs.

View Article: PubMed Central - PubMed

Affiliation: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, P. R. China.

ABSTRACT
Klockmannite copper selenide nanosheets (CuSe NSs) are synthesized by a facile microwave-assisted method and fully characterized. The nanosheets have smooth surface and hexagonal shape. The lateral size is 200-500 nm × 400-800 nm and the thickness is 55 ± 20 nm. The current-voltage characteristics of CuSe NS films show unique Ohmic and high-conducting behaviors, comparable to the thermally-deposited gold electrode. The high electrical conductivity of CuSe NSs implies their promising applications in printed electronics and nanodevices. Moreover, the local electrical variation is observed, for the first time, within an individual CuSe NS at low bias voltages (0.1 ~ 3 V) by conductive atomic force microscopy (C-AFM). This is ascribed to the quantum size effect of NS and the presence of Schottky barrier. In addition, the influence of the molar ratio of Cu(2+)/SeO2, reaction temperature, and reaction time on the growth of CuSe NSs is explored. The template effect of oleylamine and the intrinsic crystal nature of CuSe NS are proposed to account for the growth of hexagonal CuSe NSs.

No MeSH data available.


Related in: MedlinePlus