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Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

Nan T, Liu M, Ren W, Ye ZG, Sun NX - Sci Rep (2014)

Bottom Line: In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them.In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature.These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

View Article: PubMed Central - PubMed

Affiliation: Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA.

ABSTRACT
The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

No MeSH data available.


Related in: MedlinePlus

(a) Schematic of four-point resistance measurement of VOx thin film on a (011)-oriented PMN-PT single crystal substrate. The polling of the PMN-PT was achieved by applying an electric field in the [011] direction. (b) The measured resistance hysteresis loop of the VOx film as a function of temperature. The inset shows the differential curve of the VOx resistance as a function of temperature.
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f2: (a) Schematic of four-point resistance measurement of VOx thin film on a (011)-oriented PMN-PT single crystal substrate. The polling of the PMN-PT was achieved by applying an electric field in the [011] direction. (b) The measured resistance hysteresis loop of the VOx film as a function of temperature. The inset shows the differential curve of the VOx resistance as a function of temperature.

Mentions: Figure 2 (a) shows the schematics of the experimental setup for the resistivity measurement with a bias electric field applied along the direction perpendicular to the PMN-PT (011) plane. The resistivity of the as-deposited VOx thin film was measured using a four-probe technique in a probe station with a temperature-controlled chuck. The whole piece of the sample was poled by a sufficiently high electric field before carrying out any subsequent electrical measurements. Figure 2 (b) shows the hysteretic temperature dependence of the resistivity measured in the poled VOx/PMN-PT(011) heterostructrues. The resistance of the film changes by as large as one order of magnitude, while the sample undergoes the metal-insulator transition (MIT) within the temperature range of 330 K ~ 350 K. The MIT temperatures for various thermal processes were determined by the first derivative of resistivity versus temperature (the inset in Figure 2b), which are 338 K upon heating and 332 K upon cooling, respectively.


Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

Nan T, Liu M, Ren W, Ye ZG, Sun NX - Sci Rep (2014)

(a) Schematic of four-point resistance measurement of VOx thin film on a (011)-oriented PMN-PT single crystal substrate. The polling of the PMN-PT was achieved by applying an electric field in the [011] direction. (b) The measured resistance hysteresis loop of the VOx film as a function of temperature. The inset shows the differential curve of the VOx resistance as a function of temperature.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4120346&req=5

f2: (a) Schematic of four-point resistance measurement of VOx thin film on a (011)-oriented PMN-PT single crystal substrate. The polling of the PMN-PT was achieved by applying an electric field in the [011] direction. (b) The measured resistance hysteresis loop of the VOx film as a function of temperature. The inset shows the differential curve of the VOx resistance as a function of temperature.
Mentions: Figure 2 (a) shows the schematics of the experimental setup for the resistivity measurement with a bias electric field applied along the direction perpendicular to the PMN-PT (011) plane. The resistivity of the as-deposited VOx thin film was measured using a four-probe technique in a probe station with a temperature-controlled chuck. The whole piece of the sample was poled by a sufficiently high electric field before carrying out any subsequent electrical measurements. Figure 2 (b) shows the hysteretic temperature dependence of the resistivity measured in the poled VOx/PMN-PT(011) heterostructrues. The resistance of the film changes by as large as one order of magnitude, while the sample undergoes the metal-insulator transition (MIT) within the temperature range of 330 K ~ 350 K. The MIT temperatures for various thermal processes were determined by the first derivative of resistivity versus temperature (the inset in Figure 2b), which are 338 K upon heating and 332 K upon cooling, respectively.

Bottom Line: In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them.In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature.These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

View Article: PubMed Central - PubMed

Affiliation: Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA.

ABSTRACT
The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

No MeSH data available.


Related in: MedlinePlus