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Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

Nan T, Liu M, Ren W, Ye ZG, Sun NX - Sci Rep (2014)

Bottom Line: In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them.In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature.These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

View Article: PubMed Central - PubMed

Affiliation: Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA.

ABSTRACT
The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

No MeSH data available.


Related in: MedlinePlus

XRD pattern of a VOx/PMN-PT (011) oxide heterostructure obtained by magnetron sputtering.Insets are the out-of-plane PFM phase images of the pristine PMN-PT substrate (left) and the VOx film coated on PMN-PT (right).
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f1: XRD pattern of a VOx/PMN-PT (011) oxide heterostructure obtained by magnetron sputtering.Insets are the out-of-plane PFM phase images of the pristine PMN-PT substrate (left) and the VOx film coated on PMN-PT (right).

Mentions: The VOx films with a thickness of 100 nm were deposited on the (011)-oriented single crystal PMN-PT substrates by RF-magnetron sputtering at 500°C in an Ar/O2 gas atmosphere from a VO2 target. Figure 1 shows the x-ray diffraction pattern of the as-grown VOx/PMN-PT (011) heterostructure, where the PMN-PT substrate stays in an unpoled strain state. In addition to the PMN-PT (011) peak, two major peaks are observed in the XRD pattern, which correspond to the VO2 (011) and V2O5 peaks, indicating the biphased nature of the deposited film which is labeled as VOx. The surface morphologies of the substrates and the as-grown samples were imaged with the atomic force microscopy (AFM) as shown in the insets of Figure 1. PMN-PT has a rhombohedral structure with a = 4.02 Å and α = 89.9° at room temperature, with the ferroelectric polarization (P) pointing to the <111> directions of the pseudo-cubic cell. Therefore, the surface of PMN-PT shows contrast patterns arising from the structural kinks at the ferroelectric/ferroelastic domain walls (left inset) where the orientation of P changes by less than 180°. Such kinks were also observed in the AFM image of VOx/PMN-PT (right inset), where the grain size of the VOx film was found to be on the nanometer scale. By applying an electric field to the ferroelectric PMN-PT substrate, two possible tuning mechanisms, field effect and strain effect, may co-exist44. Since the VOx film has a thickness of 100 nm, the electric-field effect which only takes place in a few nanometers can be ruled out and the strain effect is dominant in this system.


Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

Nan T, Liu M, Ren W, Ye ZG, Sun NX - Sci Rep (2014)

XRD pattern of a VOx/PMN-PT (011) oxide heterostructure obtained by magnetron sputtering.Insets are the out-of-plane PFM phase images of the pristine PMN-PT substrate (left) and the VOx film coated on PMN-PT (right).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4120346&req=5

f1: XRD pattern of a VOx/PMN-PT (011) oxide heterostructure obtained by magnetron sputtering.Insets are the out-of-plane PFM phase images of the pristine PMN-PT substrate (left) and the VOx film coated on PMN-PT (right).
Mentions: The VOx films with a thickness of 100 nm were deposited on the (011)-oriented single crystal PMN-PT substrates by RF-magnetron sputtering at 500°C in an Ar/O2 gas atmosphere from a VO2 target. Figure 1 shows the x-ray diffraction pattern of the as-grown VOx/PMN-PT (011) heterostructure, where the PMN-PT substrate stays in an unpoled strain state. In addition to the PMN-PT (011) peak, two major peaks are observed in the XRD pattern, which correspond to the VO2 (011) and V2O5 peaks, indicating the biphased nature of the deposited film which is labeled as VOx. The surface morphologies of the substrates and the as-grown samples were imaged with the atomic force microscopy (AFM) as shown in the insets of Figure 1. PMN-PT has a rhombohedral structure with a = 4.02 Å and α = 89.9° at room temperature, with the ferroelectric polarization (P) pointing to the <111> directions of the pseudo-cubic cell. Therefore, the surface of PMN-PT shows contrast patterns arising from the structural kinks at the ferroelectric/ferroelastic domain walls (left inset) where the orientation of P changes by less than 180°. Such kinks were also observed in the AFM image of VOx/PMN-PT (right inset), where the grain size of the VOx film was found to be on the nanometer scale. By applying an electric field to the ferroelectric PMN-PT substrate, two possible tuning mechanisms, field effect and strain effect, may co-exist44. Since the VOx film has a thickness of 100 nm, the electric-field effect which only takes place in a few nanometers can be ruled out and the strain effect is dominant in this system.

Bottom Line: In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them.In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature.These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

View Article: PubMed Central - PubMed

Affiliation: Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA.

ABSTRACT
The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

No MeSH data available.


Related in: MedlinePlus