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Photocurrent response and semiconductor characteristics of Ce-Ce2O3-CeO2-modified TiO2 nanotube arrays.

Tan Y, Zhang S, Liang K - Nanoscale Res Lett (2014)

Bottom Line: Then, the TNT electrodes were deposited of Ce by cathodic reduction of Ce(NO3)3 6H2O.The Ce-deposited TNTs (band gap energy Eg = 2.92 eV) exhibited enhanced photocurrent responses under visible light region and indicated more negative flat band potential (Efb) compared with the TNTs without deposition.The photocurrent responses and Efb were found to be strongly dependent on the contents of Ce2O3 and CeO2 deposited on TNTs.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Environment Science and Engineering, North China Electric Power University, Yonghua North Street 619#, Baoding 071003, China. kexin91802@163.com.

ABSTRACT
We reported Ce and its oxide-modified TiO2 nanotube arrays (TNTs) and their semiconductor properties. The TNTs were prepared by anodic oxidation on pure Ti and investigated by electrochemical photocurrent response analysis. Then, the TNT electrodes were deposited of Ce by cathodic reduction of Ce(NO3)3 6H2O. After deposition, the TNT electrodes were fabricated by anodic oxidation at E = 1.0 V(SCE) for various electricity as Ce-Ce2O3-CeO2 modification. The Ce-deposited TNTs (band gap energy Eg = 2.92 eV) exhibited enhanced photocurrent responses under visible light region and indicated more negative flat band potential (Efb) compared with the TNTs without deposition. After anodic oxidation, the mixed Ce and its oxide (Ce2O3-CeO2)-modified TNT photoelectrodes exhibited higher photocurrent responses under both visible and UV light regions than the TNTs without deposition. The photocurrent responses and Efb were found to be strongly dependent on the contents of Ce2O3 and CeO2 deposited on TNTs. A new characteristic of Eg = 2.1 ± 0.1 eV was investigated in the Ce2O3- and CeO2-modified photoelectrodes. X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) were also employed to characterize various modified TNTs photoelectrodes.

No MeSH data available.


Mott-Schottky plots of all the samples in 0.1 M Na2SO4, with frequency 1,000 Hz.
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Figure 4: Mott-Schottky plots of all the samples in 0.1 M Na2SO4, with frequency 1,000 Hz.

Mentions: Figure 4 shows the Mott-Schottky plots for various TNT photoelectrodes. The intercept of the straight line of Mott-Schottky plot at the potential axis corresponds to Efb as listed in Table 2. The Efb of TNTs-Ce moves to negative potential compared to TNTs, which infers the reducibility of electrons in TNTs-Ce excited to conduction band enhanced [16]. With the oxidation of Ce in depth, the Efb moves to positive potential. But all the Ce oxide-modified TNTs' Efb are negative to TNTs except the TNTs-0.01 C.


Photocurrent response and semiconductor characteristics of Ce-Ce2O3-CeO2-modified TiO2 nanotube arrays.

Tan Y, Zhang S, Liang K - Nanoscale Res Lett (2014)

Mott-Schottky plots of all the samples in 0.1 M Na2SO4, with frequency 1,000 Hz.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4016308&req=5

Figure 4: Mott-Schottky plots of all the samples in 0.1 M Na2SO4, with frequency 1,000 Hz.
Mentions: Figure 4 shows the Mott-Schottky plots for various TNT photoelectrodes. The intercept of the straight line of Mott-Schottky plot at the potential axis corresponds to Efb as listed in Table 2. The Efb of TNTs-Ce moves to negative potential compared to TNTs, which infers the reducibility of electrons in TNTs-Ce excited to conduction band enhanced [16]. With the oxidation of Ce in depth, the Efb moves to positive potential. But all the Ce oxide-modified TNTs' Efb are negative to TNTs except the TNTs-0.01 C.

Bottom Line: Then, the TNT electrodes were deposited of Ce by cathodic reduction of Ce(NO3)3 6H2O.The Ce-deposited TNTs (band gap energy Eg = 2.92 eV) exhibited enhanced photocurrent responses under visible light region and indicated more negative flat band potential (Efb) compared with the TNTs without deposition.The photocurrent responses and Efb were found to be strongly dependent on the contents of Ce2O3 and CeO2 deposited on TNTs.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Environment Science and Engineering, North China Electric Power University, Yonghua North Street 619#, Baoding 071003, China. kexin91802@163.com.

ABSTRACT
We reported Ce and its oxide-modified TiO2 nanotube arrays (TNTs) and their semiconductor properties. The TNTs were prepared by anodic oxidation on pure Ti and investigated by electrochemical photocurrent response analysis. Then, the TNT electrodes were deposited of Ce by cathodic reduction of Ce(NO3)3 6H2O. After deposition, the TNT electrodes were fabricated by anodic oxidation at E = 1.0 V(SCE) for various electricity as Ce-Ce2O3-CeO2 modification. The Ce-deposited TNTs (band gap energy Eg = 2.92 eV) exhibited enhanced photocurrent responses under visible light region and indicated more negative flat band potential (Efb) compared with the TNTs without deposition. After anodic oxidation, the mixed Ce and its oxide (Ce2O3-CeO2)-modified TNT photoelectrodes exhibited higher photocurrent responses under both visible and UV light regions than the TNTs without deposition. The photocurrent responses and Efb were found to be strongly dependent on the contents of Ce2O3 and CeO2 deposited on TNTs. A new characteristic of Eg = 2.1 ± 0.1 eV was investigated in the Ce2O3- and CeO2-modified photoelectrodes. X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) were also employed to characterize various modified TNTs photoelectrodes.

No MeSH data available.