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RF-to-DC characteristics of direct irradiated on-chip gallium arsenide Schottky diode and antenna for application in proximity communication system.

Mustafa F, Hashim AM - Sensors (Basel) (2014)

Bottom Line: It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency.Higher output voltage in volt range is expected to be achievable for the well-matching condition.The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

View Article: PubMed Central - PubMed

Affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, Malaysia. farzies@gmail.com.

ABSTRACT
We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

No MeSH data available.


Rectified output voltages as a function of input voltages at different frequency level.
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f4-sensors-14-03493: Rectified output voltages as a function of input voltages at different frequency level.

Mentions: Figure 4 shows the average rectified voltages, Vout as a function of input power, Pin at different frequency levels. In this study, the turn-on voltage of the Schottky diode is estimated to be around 0.8 V as shown in the inset of Figure 3. Therefore, an input power of more than 0 dBm (=0.8 V) must be applied in order to turn the diode on. Furthermore, the output voltage of around 1.4 V measured at the load is the maximum DC output voltage obtainable across the Schottky diode at an input power of 22 dBm (=2 V). As expected, the output voltage increases with the increase of injected voltage. Here, the difference between the input voltage and output voltage is around 0.6 V, which is attributed to the loss. Also shown in Figure 4, it is noticed that the maximum input power that can be injected is 22 dBm due to the limitation of the signal generator. Figure 5 shows the rectified output voltages as a function of frequency at maximum input power of 22 dBm. As shown in Figure 5, the diode shows the maximum output voltage at 1 GHz and the cut-off frequency is 10 GHz.


RF-to-DC characteristics of direct irradiated on-chip gallium arsenide Schottky diode and antenna for application in proximity communication system.

Mustafa F, Hashim AM - Sensors (Basel) (2014)

Rectified output voltages as a function of input voltages at different frequency level.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3958227&req=5

f4-sensors-14-03493: Rectified output voltages as a function of input voltages at different frequency level.
Mentions: Figure 4 shows the average rectified voltages, Vout as a function of input power, Pin at different frequency levels. In this study, the turn-on voltage of the Schottky diode is estimated to be around 0.8 V as shown in the inset of Figure 3. Therefore, an input power of more than 0 dBm (=0.8 V) must be applied in order to turn the diode on. Furthermore, the output voltage of around 1.4 V measured at the load is the maximum DC output voltage obtainable across the Schottky diode at an input power of 22 dBm (=2 V). As expected, the output voltage increases with the increase of injected voltage. Here, the difference between the input voltage and output voltage is around 0.6 V, which is attributed to the loss. Also shown in Figure 4, it is noticed that the maximum input power that can be injected is 22 dBm due to the limitation of the signal generator. Figure 5 shows the rectified output voltages as a function of frequency at maximum input power of 22 dBm. As shown in Figure 5, the diode shows the maximum output voltage at 1 GHz and the cut-off frequency is 10 GHz.

Bottom Line: It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency.Higher output voltage in volt range is expected to be achievable for the well-matching condition.The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

View Article: PubMed Central - PubMed

Affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, Malaysia. farzies@gmail.com.

ABSTRACT
We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

No MeSH data available.