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RF-to-DC characteristics of direct irradiated on-chip gallium arsenide Schottky diode and antenna for application in proximity communication system.

Mustafa F, Hashim AM - Sensors (Basel) (2014)

Bottom Line: It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency.Higher output voltage in volt range is expected to be achievable for the well-matching condition.The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

View Article: PubMed Central - PubMed

Affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, Malaysia. farzies@gmail.com.

ABSTRACT
We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

No MeSH data available.


The circuit configuration for: (a) the Schottky diode and (b) the dipole antenna in direct injection experiment.
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f2-sensors-14-03493: The circuit configuration for: (a) the Schottky diode and (b) the dipole antenna in direct injection experiment.

Mentions: In this study, a RF direct injection measurement was conducted in order to confirm several parameters such as: (1) the input power needed to turn on the diode; (2) the maximum input power generated by the signal generator; (3) the operating frequencies of the fabricated Schottky diode; (4) the resonant frequency of antenna; and (5) the RF characteristics of the Schottky diode. Figure 2a,b shows the circuit configuration of the direct injection experiment for the Schottky diode and dipole antenna, respectively. As shown in Figure 2a, the RF signals were directly injected at the input side of diode using a microprober. The load resistance, RL of 50 Ω was connected to the diode in parallel and grounded to the RF source. When the injected voltage is equal or larger than threshold voltage of diode, the diode will be turned on. The generated DC voltage across the diode which also defined as an output voltage is measured at the connected load using an oscilloscope. The output voltage increases with the increase of injected voltage. From this measurement, the turn on voltage, the operating frequencies and the RF characteristics of the diode were evaluated. Next, an HP8722ES Network Analyzer (VNA) equipped with the same microprober, as shown in Figure 2b, was used to measure and confirm the resonant frequency of the dipole antenna.


RF-to-DC characteristics of direct irradiated on-chip gallium arsenide Schottky diode and antenna for application in proximity communication system.

Mustafa F, Hashim AM - Sensors (Basel) (2014)

The circuit configuration for: (a) the Schottky diode and (b) the dipole antenna in direct injection experiment.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3958227&req=5

f2-sensors-14-03493: The circuit configuration for: (a) the Schottky diode and (b) the dipole antenna in direct injection experiment.
Mentions: In this study, a RF direct injection measurement was conducted in order to confirm several parameters such as: (1) the input power needed to turn on the diode; (2) the maximum input power generated by the signal generator; (3) the operating frequencies of the fabricated Schottky diode; (4) the resonant frequency of antenna; and (5) the RF characteristics of the Schottky diode. Figure 2a,b shows the circuit configuration of the direct injection experiment for the Schottky diode and dipole antenna, respectively. As shown in Figure 2a, the RF signals were directly injected at the input side of diode using a microprober. The load resistance, RL of 50 Ω was connected to the diode in parallel and grounded to the RF source. When the injected voltage is equal or larger than threshold voltage of diode, the diode will be turned on. The generated DC voltage across the diode which also defined as an output voltage is measured at the connected load using an oscilloscope. The output voltage increases with the increase of injected voltage. From this measurement, the turn on voltage, the operating frequencies and the RF characteristics of the diode were evaluated. Next, an HP8722ES Network Analyzer (VNA) equipped with the same microprober, as shown in Figure 2b, was used to measure and confirm the resonant frequency of the dipole antenna.

Bottom Line: It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency.Higher output voltage in volt range is expected to be achievable for the well-matching condition.The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

View Article: PubMed Central - PubMed

Affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, Malaysia. farzies@gmail.com.

ABSTRACT
We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

No MeSH data available.