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Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

Yamada S, Kurokawa Y, Miyajima S, Konagai M - Nanoscale Res Lett (2014)

Bottom Line: We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films.The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films.A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan. yamada.s.aj@m.titech.ac.jp.

ABSTRACT
We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

No MeSH data available.


Schematic of the structure of Si-QDSLs after HPT for the parameter fitting of spectroscopic ellipsometry.
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Figure 5: Schematic of the structure of Si-QDSLs after HPT for the parameter fitting of spectroscopic ellipsometry.

Mentions: During HPT, the surface is damaged by atomic hydrogen. The thickness of the surface damaged layer is dependent on the treatment temperature. The thickness of the surface damaged layer was estimated by spectroscopic ellipsometry. A schematic of the structure used for the analysis is shown in Figure 5. The Tauc-Lorentz model was applied to the optical modeling of the Si-QDSL layer, and the surface damaged layer was assumed to be the effective medium approximation (EMA) layer in which 50% void exists. The estimated thicknesses of the Si-QDSL layers T, the thicknesses of the surface damaged layers Ts, and the mean square error (MSE) of each fitting are summarized in Table 1. Ts of an as-annealed Si-QDSL was approximately 2 nm, while the Ts of the treated Si-QDSLs drastically increased, indicating that the Si-QDSL structure in the surface region was broken by the atomic hydrogen.


Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

Yamada S, Kurokawa Y, Miyajima S, Konagai M - Nanoscale Res Lett (2014)

Schematic of the structure of Si-QDSLs after HPT for the parameter fitting of spectroscopic ellipsometry.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3926976&req=5

Figure 5: Schematic of the structure of Si-QDSLs after HPT for the parameter fitting of spectroscopic ellipsometry.
Mentions: During HPT, the surface is damaged by atomic hydrogen. The thickness of the surface damaged layer is dependent on the treatment temperature. The thickness of the surface damaged layer was estimated by spectroscopic ellipsometry. A schematic of the structure used for the analysis is shown in Figure 5. The Tauc-Lorentz model was applied to the optical modeling of the Si-QDSL layer, and the surface damaged layer was assumed to be the effective medium approximation (EMA) layer in which 50% void exists. The estimated thicknesses of the Si-QDSL layers T, the thicknesses of the surface damaged layers Ts, and the mean square error (MSE) of each fitting are summarized in Table 1. Ts of an as-annealed Si-QDSL was approximately 2 nm, while the Ts of the treated Si-QDSLs drastically increased, indicating that the Si-QDSL structure in the surface region was broken by the atomic hydrogen.

Bottom Line: We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films.The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films.A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan. yamada.s.aj@m.titech.ac.jp.

ABSTRACT
We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

No MeSH data available.