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Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

Yamada S, Kurokawa Y, Miyajima S, Konagai M - Nanoscale Res Lett (2014)

Bottom Line: We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films.The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films.A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan. yamada.s.aj@m.titech.ac.jp.

ABSTRACT
We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

No MeSH data available.


Arrhenius plot of diffusion coefficient of hydrogen in Si-QDSLs. The calculated diffusion coefficients of single-crystal silicon by van Wieringen et al. [22] and the estimated diffusion coefficients of an a-SiC thin film with hydrogen concentration of 0.4 ± 0.1 at.% by Schmidt et al. [23] are also described.
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Figure 2: Arrhenius plot of diffusion coefficient of hydrogen in Si-QDSLs. The calculated diffusion coefficients of single-crystal silicon by van Wieringen et al. [22] and the estimated diffusion coefficients of an a-SiC thin film with hydrogen concentration of 0.4 ± 0.1 at.% by Schmidt et al. [23] are also described.

Mentions: where the function erfc(z) is a complementary error function. The average diffusion coefficients were estimated by fitting the depth profiles with Equation 2. Red lines in Figure 1 indicate the fitting curves based on Equation 2. The calculated diffusion coefficients for each temperature were described by dots in Figure 2. The diffusion coefficient obeys Arrhenius law:


Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

Yamada S, Kurokawa Y, Miyajima S, Konagai M - Nanoscale Res Lett (2014)

Arrhenius plot of diffusion coefficient of hydrogen in Si-QDSLs. The calculated diffusion coefficients of single-crystal silicon by van Wieringen et al. [22] and the estimated diffusion coefficients of an a-SiC thin film with hydrogen concentration of 0.4 ± 0.1 at.% by Schmidt et al. [23] are also described.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3926976&req=5

Figure 2: Arrhenius plot of diffusion coefficient of hydrogen in Si-QDSLs. The calculated diffusion coefficients of single-crystal silicon by van Wieringen et al. [22] and the estimated diffusion coefficients of an a-SiC thin film with hydrogen concentration of 0.4 ± 0.1 at.% by Schmidt et al. [23] are also described.
Mentions: where the function erfc(z) is a complementary error function. The average diffusion coefficients were estimated by fitting the depth profiles with Equation 2. Red lines in Figure 1 indicate the fitting curves based on Equation 2. The calculated diffusion coefficients for each temperature were described by dots in Figure 2. The diffusion coefficient obeys Arrhenius law:

Bottom Line: We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films.The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films.A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan. yamada.s.aj@m.titech.ac.jp.

ABSTRACT
We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

No MeSH data available.