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Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

Yamada S, Kurokawa Y, Miyajima S, Konagai M - Nanoscale Res Lett (2014)

Bottom Line: We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films.The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films.A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan. yamada.s.aj@m.titech.ac.jp.

ABSTRACT
We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

No MeSH data available.


Depth profiles of hydrogen concentrations. (a) At 300°C for 20 min. (b) At 400°C for 10 min. (c) At 500°C for 3 min. (d) At 600°C for 1 min.
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Figure 1: Depth profiles of hydrogen concentrations. (a) At 300°C for 20 min. (b) At 400°C for 10 min. (c) At 500°C for 3 min. (d) At 600°C for 1 min.

Mentions: An average hydrogen concentration of 8.2 × 1022 cm-3 was almost uniformly incorporated in the superlattice films before thermal annealing. After annealing at 900°C, the average hydrogen concentration decreased to 1.4 × 1020 cm-3. After HPT, the hydrogen concentration increased. Figure 1 shows the depth profiles of hydrogen concentrations of Si-QDSL samples treated at 300°C for 20 min, 400°C for 10 min, 500°C for 3 min, and 600°C for 1 min. The oscillations with small amplitudes in the depth profiles are due to the matrix effect caused by carbon in the Si-QDSLs. The influence of the matrix effect can be negligible. In addition, structure of the Si-QDSL is almost uniform in the depth direction. Therefore, one can believe the shape of the hydrogen depth profile, which is important to determine the hydrogen diffusion coefficient. The diffusion coefficients can be estimated from these depth profiles. The hydrogen diffusion process follows the diffusion equation


Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

Yamada S, Kurokawa Y, Miyajima S, Konagai M - Nanoscale Res Lett (2014)

Depth profiles of hydrogen concentrations. (a) At 300°C for 20 min. (b) At 400°C for 10 min. (c) At 500°C for 3 min. (d) At 600°C for 1 min.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3926976&req=5

Figure 1: Depth profiles of hydrogen concentrations. (a) At 300°C for 20 min. (b) At 400°C for 10 min. (c) At 500°C for 3 min. (d) At 600°C for 1 min.
Mentions: An average hydrogen concentration of 8.2 × 1022 cm-3 was almost uniformly incorporated in the superlattice films before thermal annealing. After annealing at 900°C, the average hydrogen concentration decreased to 1.4 × 1020 cm-3. After HPT, the hydrogen concentration increased. Figure 1 shows the depth profiles of hydrogen concentrations of Si-QDSL samples treated at 300°C for 20 min, 400°C for 10 min, 500°C for 3 min, and 600°C for 1 min. The oscillations with small amplitudes in the depth profiles are due to the matrix effect caused by carbon in the Si-QDSLs. The influence of the matrix effect can be negligible. In addition, structure of the Si-QDSL is almost uniform in the depth direction. Therefore, one can believe the shape of the hydrogen depth profile, which is important to determine the hydrogen diffusion coefficient. The diffusion coefficients can be estimated from these depth profiles. The hydrogen diffusion process follows the diffusion equation

Bottom Line: We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films.The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films.A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan. yamada.s.aj@m.titech.ac.jp.

ABSTRACT
We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

No MeSH data available.