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Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching.

Asoh H, Fujihara K, Ono S - Nanoscale Res Lett (2013)

Bottom Line: Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching.Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved.By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan. asoh@cc.kogakuin.ac.jp.

ABSTRACT
Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved. By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved.

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SEM images of Si nanohole arrays fabricated by Au-assisted chemical etching. (a) SEM image of Au nanodot arrays formed on Si substrate through anodic porous alumina mask. (b) Top and (c) cross-sectional SEM images of Si nanohole arrays fabricated by Au-assisted chemical etching in 5 mol dm-3 HF - 1 mol dm-3 H2O2 solution for 1 min.
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Figure 6: SEM images of Si nanohole arrays fabricated by Au-assisted chemical etching. (a) SEM image of Au nanodot arrays formed on Si substrate through anodic porous alumina mask. (b) Top and (c) cross-sectional SEM images of Si nanohole arrays fabricated by Au-assisted chemical etching in 5 mol dm-3 HF - 1 mol dm-3 H2O2 solution for 1 min.

Mentions: To examine the effect of catalyst species on the morphology of etched silicon structures, chemical etching was also carried out using patterned Au nanodot arrays formed by a similar displacement plating. When the composition of the plating solution was changed from AgNO3/HF to Na[AuCl4] · 2H2O/HF, highly ordered Au nanodot arrays were also obtained on the silicon substrate, as shown in Figure 6a. Each dot appears to consist of two or three particles with average sizes of 20 to 40 nm. The morphology of the dots was quite similar to that of the copper dots deposited by electroless deposition in our previous work [26].


Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching.

Asoh H, Fujihara K, Ono S - Nanoscale Res Lett (2013)

SEM images of Si nanohole arrays fabricated by Au-assisted chemical etching. (a) SEM image of Au nanodot arrays formed on Si substrate through anodic porous alumina mask. (b) Top and (c) cross-sectional SEM images of Si nanohole arrays fabricated by Au-assisted chemical etching in 5 mol dm-3 HF - 1 mol dm-3 H2O2 solution for 1 min.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3852592&req=5

Figure 6: SEM images of Si nanohole arrays fabricated by Au-assisted chemical etching. (a) SEM image of Au nanodot arrays formed on Si substrate through anodic porous alumina mask. (b) Top and (c) cross-sectional SEM images of Si nanohole arrays fabricated by Au-assisted chemical etching in 5 mol dm-3 HF - 1 mol dm-3 H2O2 solution for 1 min.
Mentions: To examine the effect of catalyst species on the morphology of etched silicon structures, chemical etching was also carried out using patterned Au nanodot arrays formed by a similar displacement plating. When the composition of the plating solution was changed from AgNO3/HF to Na[AuCl4] · 2H2O/HF, highly ordered Au nanodot arrays were also obtained on the silicon substrate, as shown in Figure 6a. Each dot appears to consist of two or three particles with average sizes of 20 to 40 nm. The morphology of the dots was quite similar to that of the copper dots deposited by electroless deposition in our previous work [26].

Bottom Line: Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching.Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved.By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan. asoh@cc.kogakuin.ac.jp.

ABSTRACT
Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved. By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved.

No MeSH data available.


Related in: MedlinePlus