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EFM data mapped into 2D images of tip-sample contact potential difference and capacitance second derivative.

Lilliu S, Maragliano C, Hampton M, Elliott M, Stefancich M, Chiesa M, Dahlem MS, Macdonald JE - Sci Rep (2013)

Bottom Line: The only required equipment consists of a microscope with lift-mode EFM capable of phase shift detection.An open-source MATLAB Graphical User Interface (GUI) for images acquisition, processing and analysis has been developed.The technique is tested with Indium Tin Oxide (ITO) and with poly(3-hexylthiophene) (P3HT) nanowires for organic transistor applications.

View Article: PubMed Central - PubMed

Affiliation: 1] School of Physics and Astronomy, Cardiff University, Queens Buildings, The Parade, Cardiff CF243AA, United Kingdom [2] Masdar Institute of Science and Technology, PO Box 54224, Abu Dhabi, United Arab Emirates.

ABSTRACT
We report a simple technique for mapping Electrostatic Force Microscopy (EFM) bias sweep data into 2D images. The method allows simultaneous probing, in the same scanning area, of the contact potential difference and the second derivative of the capacitance between tip and sample, along with the height information. The only required equipment consists of a microscope with lift-mode EFM capable of phase shift detection. We designate this approach as Scanning Probe Potential Electrostatic Force Microscopy (SPP-EFM). An open-source MATLAB Graphical User Interface (GUI) for images acquisition, processing and analysis has been developed. The technique is tested with Indium Tin Oxide (ITO) and with poly(3-hexylthiophene) (P3HT) nanowires for organic transistor applications.

No MeSH data available.


Calibration parabola build from 86 (V, Δφ) data points extracted from a homogenous region consisting of a single ITO grain.The 95% prediction bounds are shown in the plot. Fitted values are: a = 0.383 [°V−2] and b = 0.18 [V]. Standard errors based on 95% prediction bounds are: Ea = 0.004 [°V−2] and Eb = 0.01 [V].
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f2: Calibration parabola build from 86 (V, Δφ) data points extracted from a homogenous region consisting of a single ITO grain.The 95% prediction bounds are shown in the plot. Fitted values are: a = 0.383 [°V−2] and b = 0.18 [V]. Standard errors based on 95% prediction bounds are: Ea = 0.004 [°V−2] and Eb = 0.01 [V].

Mentions: Figure 2 shows an example of a local calibration curve build from 86 (V, Δφ) data points extracted from a single ITO grain. The fitting parabola a(V − b)2 matches well the experimental data points, and confirms that the choice of −5 V and 5 V as the maxima of the sweeping voltage keeps the data points within a parabolic regime. The fitted coefficient are a = (Q/2K)∂2C/∂z2 is 0.383 ± 0.004 [°V−2] and b = VCPD = 0.18 ± 0.01 [V]. Here, the standard errors correspond to the 95% confidence bounds. In Figure 2, the confidence bounds are also used to plot the 95% prediction bounds.


EFM data mapped into 2D images of tip-sample contact potential difference and capacitance second derivative.

Lilliu S, Maragliano C, Hampton M, Elliott M, Stefancich M, Chiesa M, Dahlem MS, Macdonald JE - Sci Rep (2013)

Calibration parabola build from 86 (V, Δφ) data points extracted from a homogenous region consisting of a single ITO grain.The 95% prediction bounds are shown in the plot. Fitted values are: a = 0.383 [°V−2] and b = 0.18 [V]. Standard errors based on 95% prediction bounds are: Ea = 0.004 [°V−2] and Eb = 0.01 [V].
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3842085&req=5

f2: Calibration parabola build from 86 (V, Δφ) data points extracted from a homogenous region consisting of a single ITO grain.The 95% prediction bounds are shown in the plot. Fitted values are: a = 0.383 [°V−2] and b = 0.18 [V]. Standard errors based on 95% prediction bounds are: Ea = 0.004 [°V−2] and Eb = 0.01 [V].
Mentions: Figure 2 shows an example of a local calibration curve build from 86 (V, Δφ) data points extracted from a single ITO grain. The fitting parabola a(V − b)2 matches well the experimental data points, and confirms that the choice of −5 V and 5 V as the maxima of the sweeping voltage keeps the data points within a parabolic regime. The fitted coefficient are a = (Q/2K)∂2C/∂z2 is 0.383 ± 0.004 [°V−2] and b = VCPD = 0.18 ± 0.01 [V]. Here, the standard errors correspond to the 95% confidence bounds. In Figure 2, the confidence bounds are also used to plot the 95% prediction bounds.

Bottom Line: The only required equipment consists of a microscope with lift-mode EFM capable of phase shift detection.An open-source MATLAB Graphical User Interface (GUI) for images acquisition, processing and analysis has been developed.The technique is tested with Indium Tin Oxide (ITO) and with poly(3-hexylthiophene) (P3HT) nanowires for organic transistor applications.

View Article: PubMed Central - PubMed

Affiliation: 1] School of Physics and Astronomy, Cardiff University, Queens Buildings, The Parade, Cardiff CF243AA, United Kingdom [2] Masdar Institute of Science and Technology, PO Box 54224, Abu Dhabi, United Arab Emirates.

ABSTRACT
We report a simple technique for mapping Electrostatic Force Microscopy (EFM) bias sweep data into 2D images. The method allows simultaneous probing, in the same scanning area, of the contact potential difference and the second derivative of the capacitance between tip and sample, along with the height information. The only required equipment consists of a microscope with lift-mode EFM capable of phase shift detection. We designate this approach as Scanning Probe Potential Electrostatic Force Microscopy (SPP-EFM). An open-source MATLAB Graphical User Interface (GUI) for images acquisition, processing and analysis has been developed. The technique is tested with Indium Tin Oxide (ITO) and with poly(3-hexylthiophene) (P3HT) nanowires for organic transistor applications.

No MeSH data available.