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Integrated Inductors for RF Transmitters in CMOS/MEMS Smart Microsensor Systems

View Article: PubMed Central

ABSTRACT

This paper presents the integration of an inductor by complementary metal-oxide-semiconductor (CMOS) compatible processes for integrated smart microsensor systems that have been developed to monitor the motion and vital signs of humans in various environments. Integration of radio frequency transmitter (RF) technology with complementary metal-oxide-semiconductor/micro electro mechanical systems (CMOS/MEMS) microsensors is required to realize the wireless smart microsensors system. The essential RF components such as a voltage controlled RF-CMOS oscillator (VCO), spiral inductors for an LC resonator and an integrated antenna have been fabricated and evaluated experimentally. The fabricated RF transmitter and integrated antenna were packaged with subminiature series A (SMA) connectors, respectively. For the impedance (50 Ω) matching, a bonding wire type inductor was developed. In this paper, the design and fabrication of the bonding wire inductor for impedance matching is described. Integrated techniques for the RF transmitter by CMOS compatible processes have been successfully developed. After matching by inserting the bonding wire inductor between the on-chip integrated antenna and the VCO output, the measured emission power at distance of 5 m from RF transmitter was -37 dBm (0.2 μW).

No MeSH data available.


The simulated Q and L of a bonding wire inductor simulated using the HFSS.
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f12-sensors-07-01387: The simulated Q and L of a bonding wire inductor simulated using the HFSS.

Mentions: Figure 12 presents the simulated Q and L of a bonding wire inductor at different frequencies. The resonant frequency is 370-MHz and L=26.1 nH at 300-MHz and Q of 0.79 at 170-MHz. The fabricated bonding wire inductor and the DUT for network analyzing are shown in Figure 13.


Integrated Inductors for RF Transmitters in CMOS/MEMS Smart Microsensor Systems
The simulated Q and L of a bonding wire inductor simulated using the HFSS.
© Copyright Policy
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC3814858&req=5

f12-sensors-07-01387: The simulated Q and L of a bonding wire inductor simulated using the HFSS.
Mentions: Figure 12 presents the simulated Q and L of a bonding wire inductor at different frequencies. The resonant frequency is 370-MHz and L=26.1 nH at 300-MHz and Q of 0.79 at 170-MHz. The fabricated bonding wire inductor and the DUT for network analyzing are shown in Figure 13.

View Article: PubMed Central

ABSTRACT

This paper presents the integration of an inductor by complementary metal-oxide-semiconductor (CMOS) compatible processes for integrated smart microsensor systems that have been developed to monitor the motion and vital signs of humans in various environments. Integration of radio frequency transmitter (RF) technology with complementary metal-oxide-semiconductor/micro electro mechanical systems (CMOS/MEMS) microsensors is required to realize the wireless smart microsensors system. The essential RF components such as a voltage controlled RF-CMOS oscillator (VCO), spiral inductors for an LC resonator and an integrated antenna have been fabricated and evaluated experimentally. The fabricated RF transmitter and integrated antenna were packaged with subminiature series A (SMA) connectors, respectively. For the impedance (50 Ω) matching, a bonding wire type inductor was developed. In this paper, the design and fabrication of the bonding wire inductor for impedance matching is described. Integrated techniques for the RF transmitter by CMOS compatible processes have been successfully developed. After matching by inserting the bonding wire inductor between the on-chip integrated antenna and the VCO output, the measured emission power at distance of 5 m from RF transmitter was -37 dBm (0.2 μW).

No MeSH data available.