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Gas Sensors Based on Conducting Polymers

View Article: PubMed Central

ABSTRACT

The gas sensors fabricated by using conducting polymers such as polyaniline (PAni), polypyrrole (PPy) and poly (3,4-ethylenedioxythiophene) (PEDOT) as the active layers have been reviewed. This review discusses the sensing mechanism and configurations of the sensors. The factors that affect the performances of the gas sensors are also addressed. The disadvantages of the sensors and a brief prospect in this research field are discussed at the end of the review.

No MeSH data available.


Configuration of TFT (A) and IGFET (B).
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f6-sensors-07-00267: Configuration of TFT (A) and IGFET (B).

Mentions: The well known organic thin-film transistors (OTFTs) have been applied in sensing field just after it was first developed [140]. There are some reviews on OTFTs [141] and their application in sensors [130, 131, 140]. In general, a TFT consists of a semiconductor active layer in contact with two electrodes (“source” and “drain”), and a third electrode (“gate”) which is separated with the active layer by an insulating film. When it works, a source-drain voltage was applied and a source-drain current was measured. The gate is used to modulate the current by a gate potential. The source-drain current is changed when sensing film interacts with analyte. Two types of conducting polymer transistor, classified by whether the current flow through the polymer [128, 131], were used to detect gases, as illustrated in Figure 6. Figure 6A shows the configuration of a thin film transistor (TFT), its active layer is made of conducting polymer, and Figure 6B represents the structure of insulated gate field-effect transistor (IGFET), whose gate electrode is made of conducting polymer and the current flows through the other semiconducting layer, e. g. silicon.


Gas Sensors Based on Conducting Polymers
Configuration of TFT (A) and IGFET (B).
© Copyright Policy
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC3756721&req=5

f6-sensors-07-00267: Configuration of TFT (A) and IGFET (B).
Mentions: The well known organic thin-film transistors (OTFTs) have been applied in sensing field just after it was first developed [140]. There are some reviews on OTFTs [141] and their application in sensors [130, 131, 140]. In general, a TFT consists of a semiconductor active layer in contact with two electrodes (“source” and “drain”), and a third electrode (“gate”) which is separated with the active layer by an insulating film. When it works, a source-drain voltage was applied and a source-drain current was measured. The gate is used to modulate the current by a gate potential. The source-drain current is changed when sensing film interacts with analyte. Two types of conducting polymer transistor, classified by whether the current flow through the polymer [128, 131], were used to detect gases, as illustrated in Figure 6. Figure 6A shows the configuration of a thin film transistor (TFT), its active layer is made of conducting polymer, and Figure 6B represents the structure of insulated gate field-effect transistor (IGFET), whose gate electrode is made of conducting polymer and the current flows through the other semiconducting layer, e. g. silicon.

View Article: PubMed Central

ABSTRACT

The gas sensors fabricated by using conducting polymers such as polyaniline (PAni), polypyrrole (PPy) and poly (3,4-ethylenedioxythiophene) (PEDOT) as the active layers have been reviewed. This review discusses the sensing mechanism and configurations of the sensors. The factors that affect the performances of the gas sensors are also addressed. The disadvantages of the sensors and a brief prospect in this research field are discussed at the end of the review.

No MeSH data available.