Limits...
Fabrication and characterization of La2Zr2O7 films on different buffer architectures for YBa2Cu3O7-δ coated conductors by RF magnetron sputtering.

Xu D, Liu L, Xiao G, Li Y - Nanoscale Res Lett (2013)

Bottom Line: The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°.All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks.The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Center of Applied Superconductivity and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China. yjli@sjtu.edu.cn.

ABSTRACT
La2Zr2O7 (LZO) films were grown on different buffer architectures by radio frequency magnetron sputtering for the large-scale application of YBa2Cu3O7-x (YBCO)-coated conductors. The three different buffer architectures were cerium oxide (CeO2), yttria-stabilized zirconia (YSZ)/CeO2, and CeO2/YSZ/CeO2. The microstructure and surface morphology of the LZO film were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy, and atomic force microscopy. The LZO films prepared on the CeO2, YSZ/CeO2, and CeO2/YSZ/CeO2 buffer architectures were preferentially c-axis-oriented and highly textured. The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°. All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks. The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

No MeSH data available.


End-to-end voltage–current characteristics of YBCO-coated conductors. Deposited on the LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffered NiW tapes using the conventional four-probe method tested at 77 K and self field.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3750552&req=5

Figure 6: End-to-end voltage–current characteristics of YBCO-coated conductors. Deposited on the LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffered NiW tapes using the conventional four-probe method tested at 77 K and self field.

Mentions: To verify whether LZO buffer layer was suitable for the epitaxial growth of YBCO superconducting film, YBCO-coated conductors were deposited on highly textured LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffer architectures. The Ic of YBCO films on the LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffer architectures were measured at 77 K and self field by the conventional four-probe method without microbridge patterning shown in Figure 6. The critical current density was calculated from Jc = Ic/(a × b) (a and b are the film width and thickness in centimeters, respectively). From the voltage–current characteristic curves, the Ic of YBCO films were recorded by using the criterion of 1 μV/cm. Figure 6 shows that the Ic of YBCO films grown on the LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffer architectures are 140, 100, and 60 A/cm, respectively. The thicknesses of YBCO films grown on the LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffer architectures are all the same which is 500 nm. As expected, the highest Jc of 2.8 MA/cm2 at 77 K, self field is obtained for YBCO-coated conductor grown on LZO/CeO2 buffered NiW tape. Therefore, the highly textured LZO film grown on CeO2-seed buffered NiW tape, which has smooth surface without any island and crack, is suitable for the epitaxial growth of high-performance YBCO-coated conductors.


Fabrication and characterization of La2Zr2O7 films on different buffer architectures for YBa2Cu3O7-δ coated conductors by RF magnetron sputtering.

Xu D, Liu L, Xiao G, Li Y - Nanoscale Res Lett (2013)

End-to-end voltage–current characteristics of YBCO-coated conductors. Deposited on the LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffered NiW tapes using the conventional four-probe method tested at 77 K and self field.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3750552&req=5

Figure 6: End-to-end voltage–current characteristics of YBCO-coated conductors. Deposited on the LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffered NiW tapes using the conventional four-probe method tested at 77 K and self field.
Mentions: To verify whether LZO buffer layer was suitable for the epitaxial growth of YBCO superconducting film, YBCO-coated conductors were deposited on highly textured LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffer architectures. The Ic of YBCO films on the LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffer architectures were measured at 77 K and self field by the conventional four-probe method without microbridge patterning shown in Figure 6. The critical current density was calculated from Jc = Ic/(a × b) (a and b are the film width and thickness in centimeters, respectively). From the voltage–current characteristic curves, the Ic of YBCO films were recorded by using the criterion of 1 μV/cm. Figure 6 shows that the Ic of YBCO films grown on the LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffer architectures are 140, 100, and 60 A/cm, respectively. The thicknesses of YBCO films grown on the LZO/CeO2, LZO/YSZ/CeO2, and LZO/CeO2/YSZ/CeO2 buffer architectures are all the same which is 500 nm. As expected, the highest Jc of 2.8 MA/cm2 at 77 K, self field is obtained for YBCO-coated conductor grown on LZO/CeO2 buffered NiW tape. Therefore, the highly textured LZO film grown on CeO2-seed buffered NiW tape, which has smooth surface without any island and crack, is suitable for the epitaxial growth of high-performance YBCO-coated conductors.

Bottom Line: The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°.All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks.The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Center of Applied Superconductivity and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China. yjli@sjtu.edu.cn.

ABSTRACT
La2Zr2O7 (LZO) films were grown on different buffer architectures by radio frequency magnetron sputtering for the large-scale application of YBa2Cu3O7-x (YBCO)-coated conductors. The three different buffer architectures were cerium oxide (CeO2), yttria-stabilized zirconia (YSZ)/CeO2, and CeO2/YSZ/CeO2. The microstructure and surface morphology of the LZO film were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy, and atomic force microscopy. The LZO films prepared on the CeO2, YSZ/CeO2, and CeO2/YSZ/CeO2 buffer architectures were preferentially c-axis-oriented and highly textured. The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°. All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks. The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

No MeSH data available.