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Fabrication and characterization of La2Zr2O7 films on different buffer architectures for YBa2Cu3O7-δ coated conductors by RF magnetron sputtering.

Xu D, Liu L, Xiao G, Li Y - Nanoscale Res Lett (2013)

Bottom Line: The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°.All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks.The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Center of Applied Superconductivity and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China. yjli@sjtu.edu.cn.

ABSTRACT
La2Zr2O7 (LZO) films were grown on different buffer architectures by radio frequency magnetron sputtering for the large-scale application of YBa2Cu3O7-x (YBCO)-coated conductors. The three different buffer architectures were cerium oxide (CeO2), yttria-stabilized zirconia (YSZ)/CeO2, and CeO2/YSZ/CeO2. The microstructure and surface morphology of the LZO film were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy, and atomic force microscopy. The LZO films prepared on the CeO2, YSZ/CeO2, and CeO2/YSZ/CeO2 buffer architectures were preferentially c-axis-oriented and highly textured. The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°. All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks. The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

No MeSH data available.


XRD θ-2θ scans of LZO films prepared on three different buffered NiW tapes. The three different buffer architectures are curves (a) CeO2, (b) YSZ/CeO2, and (c) CeO2/YSZ/CeO2.
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Figure 1: XRD θ-2θ scans of LZO films prepared on three different buffered NiW tapes. The three different buffer architectures are curves (a) CeO2, (b) YSZ/CeO2, and (c) CeO2/YSZ/CeO2.

Mentions: To avoid the thickness effect, LZO films of the same thickness were fabricated on CeO2, YSZ/CeO2, and CeO2/YSZ/CeO2 buffered NiW substrates by RF magnetron sputtering under optimal conditions. X-ray diffraction (XRD) θ-2θ scans of LZO films are carried out to characterize the structure of LZO films, as shown in Figure 1. LZO (004) peak and CeO2 (002) peak are at the same 2θ position. The LZO film grown on CeO2-seed and CeO2/YSZ/CeO2 buffered NiW tapes shows pure c-axis orientation as only (004) reflection of the LZO film, and no LZO (222) peak is observed. This indicates that LZO film is preferentially oriented with the c-axis perpendicular to the substrate surface and has an excellent crystallinity. However, small LZO (222) peak is detected in the LZO sample grown on YSZ/CeO2 buffered NiW tape, which resulted from the minority misoriented grains in LZO films. These misoriented grains are grown on top of randomly oriented grains in the NiW substrate or formed by coalesced larger droplets. The out-of-plane and in-plane epitaxial orientations of LZO films are confirmed using ω-scan and φ-scan XRD measurements. Table 1 shows out-of-plane and in-plane textures of LZO films grown on three different buffered NiW tapes. From the texture analysis data, it can be seen that the LZO film prepared on the CeO2-seed buffered NiW tape has the best out-of-plane texture of ∆ ω = 3.4° and the in-plane texture of ∆ φ = 5.5°. The out-of-plane texture and in-plane texture of the YSZ buffer layer are ∆ ω = 4.2° and ∆ φ = 7.2°, respectively. The rocking curves and pole figure of the LZO film fabricated on the CeO2-seed buffered NiW tape are shown in Figure 2. The FWHM values of both ω-scan and φ-scan rocking curves of LZO film on the CeO2-seed buffered NiW tape are ∆ ω = 3.4° in Figure 2a and ∆ φ = 5.5° in Figure 2b. This indicates that LZO film is preferentially c-axis-oriented and has excellent high out-of-plane and in-plane alignments. In Figure 2c, the fourfold symmetry in the LZO pole figure indicates a single cube-textured LZO film.


Fabrication and characterization of La2Zr2O7 films on different buffer architectures for YBa2Cu3O7-δ coated conductors by RF magnetron sputtering.

Xu D, Liu L, Xiao G, Li Y - Nanoscale Res Lett (2013)

XRD θ-2θ scans of LZO films prepared on three different buffered NiW tapes. The three different buffer architectures are curves (a) CeO2, (b) YSZ/CeO2, and (c) CeO2/YSZ/CeO2.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
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Figure 1: XRD θ-2θ scans of LZO films prepared on three different buffered NiW tapes. The three different buffer architectures are curves (a) CeO2, (b) YSZ/CeO2, and (c) CeO2/YSZ/CeO2.
Mentions: To avoid the thickness effect, LZO films of the same thickness were fabricated on CeO2, YSZ/CeO2, and CeO2/YSZ/CeO2 buffered NiW substrates by RF magnetron sputtering under optimal conditions. X-ray diffraction (XRD) θ-2θ scans of LZO films are carried out to characterize the structure of LZO films, as shown in Figure 1. LZO (004) peak and CeO2 (002) peak are at the same 2θ position. The LZO film grown on CeO2-seed and CeO2/YSZ/CeO2 buffered NiW tapes shows pure c-axis orientation as only (004) reflection of the LZO film, and no LZO (222) peak is observed. This indicates that LZO film is preferentially oriented with the c-axis perpendicular to the substrate surface and has an excellent crystallinity. However, small LZO (222) peak is detected in the LZO sample grown on YSZ/CeO2 buffered NiW tape, which resulted from the minority misoriented grains in LZO films. These misoriented grains are grown on top of randomly oriented grains in the NiW substrate or formed by coalesced larger droplets. The out-of-plane and in-plane epitaxial orientations of LZO films are confirmed using ω-scan and φ-scan XRD measurements. Table 1 shows out-of-plane and in-plane textures of LZO films grown on three different buffered NiW tapes. From the texture analysis data, it can be seen that the LZO film prepared on the CeO2-seed buffered NiW tape has the best out-of-plane texture of ∆ ω = 3.4° and the in-plane texture of ∆ φ = 5.5°. The out-of-plane texture and in-plane texture of the YSZ buffer layer are ∆ ω = 4.2° and ∆ φ = 7.2°, respectively. The rocking curves and pole figure of the LZO film fabricated on the CeO2-seed buffered NiW tape are shown in Figure 2. The FWHM values of both ω-scan and φ-scan rocking curves of LZO film on the CeO2-seed buffered NiW tape are ∆ ω = 3.4° in Figure 2a and ∆ φ = 5.5° in Figure 2b. This indicates that LZO film is preferentially c-axis-oriented and has excellent high out-of-plane and in-plane alignments. In Figure 2c, the fourfold symmetry in the LZO pole figure indicates a single cube-textured LZO film.

Bottom Line: The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°.All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks.The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Center of Applied Superconductivity and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China. yjli@sjtu.edu.cn.

ABSTRACT
La2Zr2O7 (LZO) films were grown on different buffer architectures by radio frequency magnetron sputtering for the large-scale application of YBa2Cu3O7-x (YBCO)-coated conductors. The three different buffer architectures were cerium oxide (CeO2), yttria-stabilized zirconia (YSZ)/CeO2, and CeO2/YSZ/CeO2. The microstructure and surface morphology of the LZO film were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy, and atomic force microscopy. The LZO films prepared on the CeO2, YSZ/CeO2, and CeO2/YSZ/CeO2 buffer architectures were preferentially c-axis-oriented and highly textured. The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°. All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks. The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

No MeSH data available.