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Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.

Shuai Y, Ou X, Luo W, Mücklich A, Bürger D, Zhou S, Wu C, Chen Y, Zhang W, Helm M, Mikolajick T, Schmidt OG, Schmidt H - Sci Rep (2013)

Bottom Line: This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures.The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture.Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

ABSTRACT
This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600°C. The current-voltage (I-V) curves indicate that resistive switching can only be achieved in Au/BiFeO3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits.

No MeSH data available.


Related in: MedlinePlus

Polarization-voltage loops of sample Si-650 on Pt/Ti bottom electrode and of sapphire-650 on Pt bottom electrode measured at 1 kHz at room temperature (RT).The polarization measurement of the Si-650 sample is strongly deteriorated by the leakage current.
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f5: Polarization-voltage loops of sample Si-650 on Pt/Ti bottom electrode and of sapphire-650 on Pt bottom electrode measured at 1 kHz at room temperature (RT).The polarization measurement of the Si-650 sample is strongly deteriorated by the leakage current.

Mentions: It is important to mention that rhombohedral and orthorhombic/tetragonal BFO is ferroelectric and that the reversal of polarization may modulate the interface barrier height and induce resistive switching1549. Therefore, it is necessary to clarify the role of polarization switching in the resistive switching in the presented Au/BFO/Pt structures. The polarization-voltage (P–V) loops of sample Si-650 on a Pt/Ti bottom electrode and of sample Pt/sapphire on a Pt bottom electrode are shown in Figure 5. The P–V of Si-650 is roundish and asymmetric due to the large leakage current shown in Figure 1a. The asymmetric P–V characteristics and the decreasing polarization above ca. 9 V of Si-650 reveal a polarization gradient in this sample50. In contrast, sample Pt/sapphire exhibits a symmetric P–V loop and the maximum of polarization at 22 V. This is due to the low leakage current as shown in Figure 1b and from the symmetric I–V curve of the Pt/sapphire sample.


Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.

Shuai Y, Ou X, Luo W, Mücklich A, Bürger D, Zhou S, Wu C, Chen Y, Zhang W, Helm M, Mikolajick T, Schmidt OG, Schmidt H - Sci Rep (2013)

Polarization-voltage loops of sample Si-650 on Pt/Ti bottom electrode and of sapphire-650 on Pt bottom electrode measured at 1 kHz at room temperature (RT).The polarization measurement of the Si-650 sample is strongly deteriorated by the leakage current.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3713515&req=5

f5: Polarization-voltage loops of sample Si-650 on Pt/Ti bottom electrode and of sapphire-650 on Pt bottom electrode measured at 1 kHz at room temperature (RT).The polarization measurement of the Si-650 sample is strongly deteriorated by the leakage current.
Mentions: It is important to mention that rhombohedral and orthorhombic/tetragonal BFO is ferroelectric and that the reversal of polarization may modulate the interface barrier height and induce resistive switching1549. Therefore, it is necessary to clarify the role of polarization switching in the resistive switching in the presented Au/BFO/Pt structures. The polarization-voltage (P–V) loops of sample Si-650 on a Pt/Ti bottom electrode and of sample Pt/sapphire on a Pt bottom electrode are shown in Figure 5. The P–V of Si-650 is roundish and asymmetric due to the large leakage current shown in Figure 1a. The asymmetric P–V characteristics and the decreasing polarization above ca. 9 V of Si-650 reveal a polarization gradient in this sample50. In contrast, sample Pt/sapphire exhibits a symmetric P–V loop and the maximum of polarization at 22 V. This is due to the low leakage current as shown in Figure 1b and from the symmetric I–V curve of the Pt/sapphire sample.

Bottom Line: This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures.The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture.Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

ABSTRACT
This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600°C. The current-voltage (I-V) curves indicate that resistive switching can only be achieved in Au/BiFeO3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits.

No MeSH data available.


Related in: MedlinePlus