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Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.

Wei W, Qin Z, Fan S, Li Z, Shi K, Zhu Q, Zhang G - Nanoscale Res Lett (2012)

Bottom Line: A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate.The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy.It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing, 100871, People's Republic of China. zxqin@pku.edu.cn.

ABSTRACT
A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

No MeSH data available.


XRD pattern of β-Ga2O3 formed on a GaN template for sample III.
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Figure 1: XRD pattern of β-Ga2O3 formed on a GaN template for sample III.

Mentions: According to the results of the XRD measurements, peaks from the (−201), (−402), and (−603) planes of β-Ga2O3 and the (002) plane of wurtzite GaN were observed in sample III, as shown in Figure 1. The epitaxial relationships were found to be (−201) β-Ga2O3//(002) wurtzite GaN.


Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.

Wei W, Qin Z, Fan S, Li Z, Shi K, Zhu Q, Zhang G - Nanoscale Res Lett (2012)

XRD pattern of β-Ga2O3 formed on a GaN template for sample III.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3526396&req=5

Figure 1: XRD pattern of β-Ga2O3 formed on a GaN template for sample III.
Mentions: According to the results of the XRD measurements, peaks from the (−201), (−402), and (−603) planes of β-Ga2O3 and the (002) plane of wurtzite GaN were observed in sample III, as shown in Figure 1. The epitaxial relationships were found to be (−201) β-Ga2O3//(002) wurtzite GaN.

Bottom Line: A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate.The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy.It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing, 100871, People's Republic of China. zxqin@pku.edu.cn.

ABSTRACT
A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

No MeSH data available.