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Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.


(a) IOES with an Eπ of 600 kV/m; (b) IOES with an Eπ of 70 kV/m [45].
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f8-sensors-12-11406: (a) IOES with an Eπ of 600 kV/m; (b) IOES with an Eπ of 70 kV/m [45].

Mentions: Based on existing knowledge and the requirements for measuring an intense E-field, the structures of the antenna and electrode were optimized, and IOESs suitable for intense E-field detection were developed by Tsinghua Univ. (THU) [45]. The fabricated sensors have Eπ ranges from ∼10 kV/m to ∼100 kV/m and a flat frequency response curve from the power frequency to greater than 100 MHz. For the design shown in Figure 8(a), two electrodes with a distance of 40 μm were connected to the vertical dipole antennas with a length of 2 mm, and the Eπ was approximately 600 kV/m. For the IOES illustrated in Figure 8(b), dipole antennas were combined with the electrodes. The gap between the electrodes was enlarged to 100 μm, and the length of the antenna was shortened to 10 mm, leading to an Eπ of approximately 70 kV/m.


Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

(a) IOES with an Eπ of 600 kV/m; (b) IOES with an Eπ of 70 kV/m [45].
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3472891&req=5

f8-sensors-12-11406: (a) IOES with an Eπ of 600 kV/m; (b) IOES with an Eπ of 70 kV/m [45].
Mentions: Based on existing knowledge and the requirements for measuring an intense E-field, the structures of the antenna and electrode were optimized, and IOESs suitable for intense E-field detection were developed by Tsinghua Univ. (THU) [45]. The fabricated sensors have Eπ ranges from ∼10 kV/m to ∼100 kV/m and a flat frequency response curve from the power frequency to greater than 100 MHz. For the design shown in Figure 8(a), two electrodes with a distance of 40 μm were connected to the vertical dipole antennas with a length of 2 mm, and the Eπ was approximately 600 kV/m. For the IOES illustrated in Figure 8(b), dipole antennas were combined with the electrodes. The gap between the electrodes was enlarged to 100 μm, and the length of the antenna was shortened to 10 mm, leading to an Eπ of approximately 70 kV/m.

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.