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Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.


The domain-inversed IOES developed by the Srico Corp [64].
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f7-sensors-12-11406: The domain-inversed IOES developed by the Srico Corp [64].

Mentions: From 1994 to 1995, an MZI-based IOES with neither an antenna nor an electrode was developed separately by the Srico Corp. and the Univ. of British Columbia (UBC) [64,65]. The two arms of the MZI had different Ti-ion concentrations corresponding to a distinct Curie temperature. Under a certain temperature (e.g., 1,150 °C), domain inversion occurs in the area with a higher Ti-ion concentration, and the electro-optic coefficient is reversed. The two arms of the MZI have different electro-optic coefficients. The IOES developed by Srico Corp. had a minimum detectable field of 0.22 V/m and a bandwidth of 1 GHz, as shown in Figure 7.


Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

The domain-inversed IOES developed by the Srico Corp [64].
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3472891&req=5

f7-sensors-12-11406: The domain-inversed IOES developed by the Srico Corp [64].
Mentions: From 1994 to 1995, an MZI-based IOES with neither an antenna nor an electrode was developed separately by the Srico Corp. and the Univ. of British Columbia (UBC) [64,65]. The two arms of the MZI had different Ti-ion concentrations corresponding to a distinct Curie temperature. Under a certain temperature (e.g., 1,150 °C), domain inversion occurs in the area with a higher Ti-ion concentration, and the electro-optic coefficient is reversed. The two arms of the MZI have different electro-optic coefficients. The IOES developed by Srico Corp. had a minimum detectable field of 0.22 V/m and a bandwidth of 1 GHz, as shown in Figure 7.

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.