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Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.


(a) NEMP simulator; (b) Normalized waveforms of the original E-field and the sensor output.
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f28-sensors-12-11406: (a) NEMP simulator; (b) Normalized waveforms of the original E-field and the sensor output.

Mentions: The nuclear electromagnetic pulse (NEMP) generally has a double exponential pulse shape with a rise time of a few ns, a maximum E-field strength of 50 kV/m, and a full-width half-max time of 200–400 ns [5]. The simulated NEMP can be generated by an NEMP simulator [88] such as a high voltage source, a gas discharge switch and a transverse electromagnetic strip transmission line, as shown in Figure 28(a). The voltage source is connected to the input end of the gas discharge switch through the peaking capacitor. The terminal of the transmission line is a matched load comprising metal film resistors. The voltage U between the transmission lines can be measured by the resistor divider, and the E-field at the central point can be calculated using U/d (where d is the separation of the transmission line). The sensor is located at the central point, and the electronic devices are housed in a screened room.


Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

(a) NEMP simulator; (b) Normalized waveforms of the original E-field and the sensor output.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3472891&req=5

f28-sensors-12-11406: (a) NEMP simulator; (b) Normalized waveforms of the original E-field and the sensor output.
Mentions: The nuclear electromagnetic pulse (NEMP) generally has a double exponential pulse shape with a rise time of a few ns, a maximum E-field strength of 50 kV/m, and a full-width half-max time of 200–400 ns [5]. The simulated NEMP can be generated by an NEMP simulator [88] such as a high voltage source, a gas discharge switch and a transverse electromagnetic strip transmission line, as shown in Figure 28(a). The voltage source is connected to the input end of the gas discharge switch through the peaking capacitor. The terminal of the transmission line is a matched load comprising metal film resistors. The voltage U between the transmission lines can be measured by the resistor divider, and the E-field at the central point can be calculated using U/d (where d is the separation of the transmission line). The sensor is located at the central point, and the electronic devices are housed in a screened room.

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.