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Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.


Typical results of E-field at 70 cm above the plane (a) with applied voltage of 100 kV and (b) with applied voltage of 150 kV [85] (Copyright © 2011 AIP, Reprinted with permission).
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f25-sensors-12-11406: Typical results of E-field at 70 cm above the plane (a) with applied voltage of 100 kV and (b) with applied voltage of 150 kV [85] (Copyright © 2011 AIP, Reprinted with permission).

Mentions: Typical results are shown in Figure 25. When the applied voltage is low, the space E-field followed the applied voltage with less than 5% error. When the voltage reached a specific level (e.g., above 200 kV under the experimental conditions), the space E-field was distorted. The E-field strength suddenly increased ΔE, and an E-field step with a rapid rise time was observed. The E-field step was shown to be caused by the space net charge. From the E-step rise time and the corona area range, the average electron drift speed under the experiment situation was estimated to be approximately 0.2 × 106 to 0.6 × 106 m/s.


Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

Typical results of E-field at 70 cm above the plane (a) with applied voltage of 100 kV and (b) with applied voltage of 150 kV [85] (Copyright © 2011 AIP, Reprinted with permission).
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3472891&req=5

f25-sensors-12-11406: Typical results of E-field at 70 cm above the plane (a) with applied voltage of 100 kV and (b) with applied voltage of 150 kV [85] (Copyright © 2011 AIP, Reprinted with permission).
Mentions: Typical results are shown in Figure 25. When the applied voltage is low, the space E-field followed the applied voltage with less than 5% error. When the voltage reached a specific level (e.g., above 200 kV under the experimental conditions), the space E-field was distorted. The E-field strength suddenly increased ΔE, and an E-field step with a rapid rise time was observed. The E-field step was shown to be caused by the space net charge. From the E-step rise time and the corona area range, the average electron drift speed under the experiment situation was estimated to be approximately 0.2 × 106 to 0.6 × 106 m/s.

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.