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Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.


Measurement of E-field distribution along a composite insulator [84] (Copyright © 1997 IEEE, Reprinted with permission).
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Related In: Results  -  Collection

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f22-sensors-12-11406: Measurement of E-field distribution along a composite insulator [84] (Copyright © 1997 IEEE, Reprinted with permission).

Mentions: Measurement of the power frequency E-field distribution along composite insulators is important for the optimization of the insulator structure [84]. The experimental configuration is shown in Figure 22, which simulates the arrangement of suspension insulators on a tower. The E-field sensor was fixed by an insulated bracket to ensure the proper position of the sensor. The output voltage of the power frequency transformer was fixed at 35 kV during the experiment.


Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

Measurement of E-field distribution along a composite insulator [84] (Copyright © 1997 IEEE, Reprinted with permission).
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3472891&req=5

f22-sensors-12-11406: Measurement of E-field distribution along a composite insulator [84] (Copyright © 1997 IEEE, Reprinted with permission).
Mentions: Measurement of the power frequency E-field distribution along composite insulators is important for the optimization of the insulator structure [84]. The experimental configuration is shown in Figure 22, which simulates the arrangement of suspension insulators on a tower. The E-field sensor was fixed by an insulated bracket to ensure the proper position of the sensor. The output voltage of the power frequency transformer was fixed at 35 kV during the experiment.

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.