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Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.


Structure of CPI-based IOES. (a) Polarization state of the input and output light; (b) Coupling of the fiber and the waveguide.
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f14-sensors-12-11406: Structure of CPI-based IOES. (a) Polarization state of the input and output light; (b) Coupling of the fiber and the waveguide.

Mentions: The potential advantage of the MZI lies in its high sensitivity; thus, the MZI-based IOES has been widely applied to the EMC test. Because the potential advantage of the CPI is high stability, it has drawn much attention in the area of voltage measurement and intense E-field detection. The structure of the CPI is illustrated in Figure 14.


Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

Structure of CPI-based IOES. (a) Polarization state of the input and output light; (b) Coupling of the fiber and the waveguide.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3472891&req=5

f14-sensors-12-11406: Structure of CPI-based IOES. (a) Polarization state of the input and output light; (b) Coupling of the fiber and the waveguide.
Mentions: The potential advantage of the MZI lies in its high sensitivity; thus, the MZI-based IOES has been widely applied to the EMC test. Because the potential advantage of the CPI is high stability, it has drawn much attention in the area of voltage measurement and intense E-field detection. The structure of the CPI is illustrated in Figure 14.

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.