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Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.


(a) Schematic of CI-based IOES; (b) Sensor after encapsulation.
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f12-sensors-12-11406: (a) Schematic of CI-based IOES; (b) Sensor after encapsulation.

Mentions: A CI-based IOES can improve the controllability of φB, but it has a complicated transfer function [70]. A new CI-based IOES has been proposed that has a simple sinusoidal transfer function and a more favorable optical bias; this IOES has the advantages of both the MZI and conventional CI types [72]. The structure of the novel sensor is shown in Figure 12(a). The width of the waveguide was designated to be 6 μm to support a fundamental mode only. The distance of the coupler was selected as 7 μm, and the interaction length LC was chosen as 2.8 mm. The fabricated sensor is shown in Figure 12(b) and has dimensions of 7 × 1 × 1 cm3.


Development and application of integrated optical sensors for intense E-field measurement.

Zeng R, Wang B, Niu B, Yu Z - Sensors (Basel) (2012)

(a) Schematic of CI-based IOES; (b) Sensor after encapsulation.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3472891&req=5

f12-sensors-12-11406: (a) Schematic of CI-based IOES; (b) Sensor after encapsulation.
Mentions: A CI-based IOES can improve the controllability of φB, but it has a complicated transfer function [70]. A new CI-based IOES has been proposed that has a simple sinusoidal transfer function and a more favorable optical bias; this IOES has the advantages of both the MZI and conventional CI types [72]. The structure of the novel sensor is shown in Figure 12(a). The width of the waveguide was designated to be 6 μm to support a fundamental mode only. The distance of the coupler was selected as 7 μm, and the interaction length LC was chosen as 2.8 mm. The fabricated sensor is shown in Figure 12(b) and has dimensions of 7 × 1 × 1 cm3.

Bottom Line: Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection.More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated.Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

View Article: PubMed Central - PubMed

Affiliation: State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China. zengrong@tsinghua.edu.cn

ABSTRACT
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.

No MeSH data available.