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Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Dang Z, Breese MB, Recio-Sánchez G, Azimi S, Song J, Liang H, Banas A, Torres-Costa V, Martín-Palma RJ - Nanoscale Res Lett (2012)

Bottom Line: A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown.In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach.Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

View Article: PubMed Central - HTML - PubMed

Affiliation: Centre For Ion Beam Applications (CIBA), Department Of Physics, National University Of Singapore, Singapore, 117542, Singapore. rongmeijiaoyin@gmail.com.

ABSTRACT
A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

No MeSH data available.


Schematic of fabrication of freestanding silicon wires. (a) Proton beam-writing process and resultant defect distribution in cross-section view. (b) Selective formation of porous silicon in subsequent electrochemical etching. (c) Removal of porous silicon in KOH solution. (d) SEM image of freestanding silicon wires with three different spacings.
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Figure 4: Schematic of fabrication of freestanding silicon wires. (a) Proton beam-writing process and resultant defect distribution in cross-section view. (b) Selective formation of porous silicon in subsequent electrochemical etching. (c) Removal of porous silicon in KOH solution. (d) SEM image of freestanding silicon wires with three different spacings.

Mentions: To obtain freestanding structures, a high-energy proton beam of 1 MeV, which has a deep penetration depth in silicon, was used to irradiate lines with an extremely high fluence, 1 × 1012/cm, at the same area which function as supports, as in Figure 4a. Line fluence is used here in the line irradiation case where the size of ion beam is smaller than the lateral width of high defect regions. In subsequent electrochemical etching, the etching time and current density for different resistivity wafers were carefully controlled to completely undercut the end-of-range regions of 250-keV protons, but not reach the end-of-range of 1-MeV protons, as in Figure 4b. Subsequent dipping in dilute KOH solution removed the porous silicon, and freestanding silicon wires supported by thick walls were obtained, as in Figure 4c. Figure 4d shows freestanding silicon wires with three different spacings, where 250-keV protons were focused to 100 nm and irradiated with a line fluence of 1 × 1011/cm. Based on this, fabrication of a 2D photonic slab of a square lattice of air holes in a silicon matrix was designed.


Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Dang Z, Breese MB, Recio-Sánchez G, Azimi S, Song J, Liang H, Banas A, Torres-Costa V, Martín-Palma RJ - Nanoscale Res Lett (2012)

Schematic of fabrication of freestanding silicon wires. (a) Proton beam-writing process and resultant defect distribution in cross-section view. (b) Selective formation of porous silicon in subsequent electrochemical etching. (c) Removal of porous silicon in KOH solution. (d) SEM image of freestanding silicon wires with three different spacings.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3420235&req=5

Figure 4: Schematic of fabrication of freestanding silicon wires. (a) Proton beam-writing process and resultant defect distribution in cross-section view. (b) Selective formation of porous silicon in subsequent electrochemical etching. (c) Removal of porous silicon in KOH solution. (d) SEM image of freestanding silicon wires with three different spacings.
Mentions: To obtain freestanding structures, a high-energy proton beam of 1 MeV, which has a deep penetration depth in silicon, was used to irradiate lines with an extremely high fluence, 1 × 1012/cm, at the same area which function as supports, as in Figure 4a. Line fluence is used here in the line irradiation case where the size of ion beam is smaller than the lateral width of high defect regions. In subsequent electrochemical etching, the etching time and current density for different resistivity wafers were carefully controlled to completely undercut the end-of-range regions of 250-keV protons, but not reach the end-of-range of 1-MeV protons, as in Figure 4b. Subsequent dipping in dilute KOH solution removed the porous silicon, and freestanding silicon wires supported by thick walls were obtained, as in Figure 4c. Figure 4d shows freestanding silicon wires with three different spacings, where 250-keV protons were focused to 100 nm and irradiated with a line fluence of 1 × 1011/cm. Based on this, fabrication of a 2D photonic slab of a square lattice of air holes in a silicon matrix was designed.

Bottom Line: A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown.In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach.Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

View Article: PubMed Central - HTML - PubMed

Affiliation: Centre For Ion Beam Applications (CIBA), Department Of Physics, National University Of Singapore, Singapore, 117542, Singapore. rongmeijiaoyin@gmail.com.

ABSTRACT
A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

No MeSH data available.