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Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Dang Z, Breese MB, Recio-Sánchez G, Azimi S, Song J, Liang H, Banas A, Torres-Costa V, Martín-Palma RJ - Nanoscale Res Lett (2012)

Bottom Line: A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown.In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach.Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

View Article: PubMed Central - HTML - PubMed

Affiliation: Centre For Ion Beam Applications (CIBA), Department Of Physics, National University Of Singapore, Singapore, 117542, Singapore. rongmeijiaoyin@gmail.com.

ABSTRACT
A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

No MeSH data available.


Defect distribution from SRIM calculation. Defect density distribution along the trajectory of ions for 250-keV and 1-MeV protons in silicon.
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Figure 3: Defect distribution from SRIM calculation. Defect density distribution along the trajectory of ions for 250-keV and 1-MeV protons in silicon.

Mentions: Figure 3 shows the defect density distribution versus depth for 250-keV and 1-MeV protons in silicon from Stopping and Ranges of Ions in Matter (SRIM) simulation [22]. Most of the defects concentrate at the end-of-range regions where the ions stop. At a moderate fluence for 250-keV protons, regions with high-enough defect density to inhibit formation of porous silicon are only located at a depth around 2.4 μm; thus, buried silicon wires form surrounded by porous silicon.


Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Dang Z, Breese MB, Recio-Sánchez G, Azimi S, Song J, Liang H, Banas A, Torres-Costa V, Martín-Palma RJ - Nanoscale Res Lett (2012)

Defect distribution from SRIM calculation. Defect density distribution along the trajectory of ions for 250-keV and 1-MeV protons in silicon.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3420235&req=5

Figure 3: Defect distribution from SRIM calculation. Defect density distribution along the trajectory of ions for 250-keV and 1-MeV protons in silicon.
Mentions: Figure 3 shows the defect density distribution versus depth for 250-keV and 1-MeV protons in silicon from Stopping and Ranges of Ions in Matter (SRIM) simulation [22]. Most of the defects concentrate at the end-of-range regions where the ions stop. At a moderate fluence for 250-keV protons, regions with high-enough defect density to inhibit formation of porous silicon are only located at a depth around 2.4 μm; thus, buried silicon wires form surrounded by porous silicon.

Bottom Line: A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown.In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach.Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

View Article: PubMed Central - HTML - PubMed

Affiliation: Centre For Ion Beam Applications (CIBA), Department Of Physics, National University Of Singapore, Singapore, 117542, Singapore. rongmeijiaoyin@gmail.com.

ABSTRACT
A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

No MeSH data available.