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Electrical characterization of gold-DNA-gold structures in presence of an external magnetic field by means of I-V curve analysis.

Khatir NM, Banihashemian SM, Periasamy V, Ritikos R, Abd Majid WH, Abdul Rahman S - Sensors (Basel) (2012)

Bottom Line: The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field.This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction.The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

View Article: PubMed Central - PubMed

Affiliation: Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur, Malaysia. mahmoudy_phy@yahoo.com

ABSTRACT
This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V) curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

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The I–V curve for gold-DNA-gold structure in presence of various magnetic fields at room temperature. The subfigure shows I–V curve of the junction between the two electrodes in absence of DNA molecules.
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f3-sensors-12-03578: The I–V curve for gold-DNA-gold structure in presence of various magnetic fields at room temperature. The subfigure shows I–V curve of the junction between the two electrodes in absence of DNA molecules.

Mentions: The I–V characteristic curve for gold-DNA-gold structure in the presence of various magnetic fields was measured in this setup (Figure 3). The characteristic curve I–V shows rectifying behavior that under forward bias, current increases exponentially with low threshold voltage. DNA strands, in this structure, act as a semiconductor equivalent to a back-to-back diode.


Electrical characterization of gold-DNA-gold structures in presence of an external magnetic field by means of I-V curve analysis.

Khatir NM, Banihashemian SM, Periasamy V, Ritikos R, Abd Majid WH, Abdul Rahman S - Sensors (Basel) (2012)

The I–V curve for gold-DNA-gold structure in presence of various magnetic fields at room temperature. The subfigure shows I–V curve of the junction between the two electrodes in absence of DNA molecules.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3376582&req=5

f3-sensors-12-03578: The I–V curve for gold-DNA-gold structure in presence of various magnetic fields at room temperature. The subfigure shows I–V curve of the junction between the two electrodes in absence of DNA molecules.
Mentions: The I–V characteristic curve for gold-DNA-gold structure in the presence of various magnetic fields was measured in this setup (Figure 3). The characteristic curve I–V shows rectifying behavior that under forward bias, current increases exponentially with low threshold voltage. DNA strands, in this structure, act as a semiconductor equivalent to a back-to-back diode.

Bottom Line: The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field.This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction.The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

View Article: PubMed Central - PubMed

Affiliation: Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur, Malaysia. mahmoudy_phy@yahoo.com

ABSTRACT
This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V) curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

Show MeSH
Related in: MedlinePlus