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Electrical characterization of gold-DNA-gold structures in presence of an external magnetic field by means of I-V curve analysis.

Khatir NM, Banihashemian SM, Periasamy V, Ritikos R, Abd Majid WH, Abdul Rahman S - Sensors (Basel) (2012)

Bottom Line: The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field.This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction.The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

View Article: PubMed Central - PubMed

Affiliation: Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur, Malaysia. mahmoudy_phy@yahoo.com

ABSTRACT
This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V) curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

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Related in: MedlinePlus

Two electrodes L and R (L = left, R = right) with an insulator gap in the gold-DNA-gold structure in the presence of external magnetic field is placed inside cryostat connected to temperature controller, semiconductor analyzer. (a) MDM; (b) Electromagnet; (c) Cryostat; (d) Temperature controller; (e) Semiconductor analyzer.
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f2-sensors-12-03578: Two electrodes L and R (L = left, R = right) with an insulator gap in the gold-DNA-gold structure in the presence of external magnetic field is placed inside cryostat connected to temperature controller, semiconductor analyzer. (a) MDM; (b) Electromagnet; (c) Cryostat; (d) Temperature controller; (e) Semiconductor analyzer.

Mentions: I–V characterization of MDM in the presence and absence of magnetic field, generated by an Electromagnet 3472-50, in dark conditions (inside a cryostat with light protection) was achieved using a semiconductor analyzer (SMU-236, Keithly) at different temperatures using a temperature controller Lakeshore-331 (as depicted in Figure 2).


Electrical characterization of gold-DNA-gold structures in presence of an external magnetic field by means of I-V curve analysis.

Khatir NM, Banihashemian SM, Periasamy V, Ritikos R, Abd Majid WH, Abdul Rahman S - Sensors (Basel) (2012)

Two electrodes L and R (L = left, R = right) with an insulator gap in the gold-DNA-gold structure in the presence of external magnetic field is placed inside cryostat connected to temperature controller, semiconductor analyzer. (a) MDM; (b) Electromagnet; (c) Cryostat; (d) Temperature controller; (e) Semiconductor analyzer.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3376582&req=5

f2-sensors-12-03578: Two electrodes L and R (L = left, R = right) with an insulator gap in the gold-DNA-gold structure in the presence of external magnetic field is placed inside cryostat connected to temperature controller, semiconductor analyzer. (a) MDM; (b) Electromagnet; (c) Cryostat; (d) Temperature controller; (e) Semiconductor analyzer.
Mentions: I–V characterization of MDM in the presence and absence of magnetic field, generated by an Electromagnet 3472-50, in dark conditions (inside a cryostat with light protection) was achieved using a semiconductor analyzer (SMU-236, Keithly) at different temperatures using a temperature controller Lakeshore-331 (as depicted in Figure 2).

Bottom Line: The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field.This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction.The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

View Article: PubMed Central - PubMed

Affiliation: Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur, Malaysia. mahmoudy_phy@yahoo.com

ABSTRACT
This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V) curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

Show MeSH
Related in: MedlinePlus