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Electrical characterization of gold-DNA-gold structures in presence of an external magnetic field by means of I-V curve analysis.

Khatir NM, Banihashemian SM, Periasamy V, Ritikos R, Abd Majid WH, Abdul Rahman S - Sensors (Basel) (2012)

Bottom Line: The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field.This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction.The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

View Article: PubMed Central - PubMed

Affiliation: Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur, Malaysia. mahmoudy_phy@yahoo.com

ABSTRACT
This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V) curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

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Related in: MedlinePlus

Schematic diagram showing the sample preparation. (a) The sample preparation. (RCA); (b) The photoresist deposition and UV-exposure through the mask; (c) Chorumum deposition; (d) Gold deposition; (e) Lift off process.
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f1-sensors-12-03578: Schematic diagram showing the sample preparation. (a) The sample preparation. (RCA); (b) The photoresist deposition and UV-exposure through the mask; (c) Chorumum deposition; (d) Gold deposition; (e) Lift off process.

Mentions: After cleaning wafers according to the standard method (RCA) and drying by nitrogen gas (as shown in Figure 1(a)), the photoresist AZl512 was deposited using spin coating and UV-lithography through the designed mask (as shown in Figure 1(b)). After this process, chromium and then gold deposition on silicon substrate of 90 and 150 nm respectively was achieved by DC magnetron sputtering and thermal evaporation (as in Figure 1(c,d)). A lift-off process is followed as the very final part of an experiment (see Figure 1(e)).


Electrical characterization of gold-DNA-gold structures in presence of an external magnetic field by means of I-V curve analysis.

Khatir NM, Banihashemian SM, Periasamy V, Ritikos R, Abd Majid WH, Abdul Rahman S - Sensors (Basel) (2012)

Schematic diagram showing the sample preparation. (a) The sample preparation. (RCA); (b) The photoresist deposition and UV-exposure through the mask; (c) Chorumum deposition; (d) Gold deposition; (e) Lift off process.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3376582&req=5

f1-sensors-12-03578: Schematic diagram showing the sample preparation. (a) The sample preparation. (RCA); (b) The photoresist deposition and UV-exposure through the mask; (c) Chorumum deposition; (d) Gold deposition; (e) Lift off process.
Mentions: After cleaning wafers according to the standard method (RCA) and drying by nitrogen gas (as shown in Figure 1(a)), the photoresist AZl512 was deposited using spin coating and UV-lithography through the designed mask (as shown in Figure 1(b)). After this process, chromium and then gold deposition on silicon substrate of 90 and 150 nm respectively was achieved by DC magnetron sputtering and thermal evaporation (as in Figure 1(c,d)). A lift-off process is followed as the very final part of an experiment (see Figure 1(e)).

Bottom Line: The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field.This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction.The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

View Article: PubMed Central - PubMed

Affiliation: Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur, Malaysia. mahmoudy_phy@yahoo.com

ABSTRACT
This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V) curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.

Show MeSH
Related in: MedlinePlus