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Morphology control and optical properties of SiGe nanostructures grown on glass substrate.

Chang HK, Lee SC - Nanoscale Res Lett (2012)

Bottom Line: In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process.By controlling growth conditions, different SiGe nanostructures can be easily tuned.The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan. sclee@cc.ee.ntu.edu.tw.

ABSTRACT
With the rapid progress of nanotechnology, nanostructures with different morphologies have been realized, which may be very promising to enhance the performance of semiconductor devices. In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process. By controlling growth conditions, different SiGe nanostructures can be easily tuned. Structures and compositions of the nanostructures were determined by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The optical properties of various SiGe nanostructures revealed some dependence with their morphologies, which may be suitable for solar cell applications. The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

No MeSH data available.


Related in: MedlinePlus

Reflectance spectra. Spectral reflectance of SiGe nanostructures measured with light incidents along the normal direction to the surface.
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Figure 5: Reflectance spectra. Spectral reflectance of SiGe nanostructures measured with light incidents along the normal direction to the surface.

Mentions: Nanowires may possess good antireflection properties for solar cell applications because the subwavelength scale of nanowire arrays will strongly scatter incident light and has a graded refractive index, which may enhance the incidence of light in usable wavelength range. Effective medium models predict this suggestion [16]. To find the antireflection performance on our samples, we also conduct the reflectance measurement on SiGe nanostructures grown at different temperatures. The reflection spectra were illustrated in Figure 5. Samples with a dark surface usually demonstrate reduced reflection due to enhanced absorption from the surface, but nanowires with core-shell structures may get lower reflection even though the sample has a light surface. It has been shown that core-shell nanowires exhibit good antireflection properties due to enhanced light trapping in these structures [17]. The reflectance of the sample with core-shell structures has been highly suppressed to less than 1% in the whole measured range. The nanorods grown at 405°C and 438°C have roughly the same reflectance from 350 to 450 nm. For reflection above 600 nm, both 405°C and 438°C samples start to exhibit interference effects. Since there are lower yields at 438°C than at 405°C, the sample grown at 438°C may have more thin film coating in the region where no nanorods grow. Due to the interference effects of the thin film coating, the sample grown at 438°C will show a local minimum in the reflectance curves. Therefore, it has lower reflection above 800 nm compared with the sample grown at 405°C. All the samples exhibit lower reflectance than their substrate, which means that the SiGe nanostructures have higher absorption.


Morphology control and optical properties of SiGe nanostructures grown on glass substrate.

Chang HK, Lee SC - Nanoscale Res Lett (2012)

Reflectance spectra. Spectral reflectance of SiGe nanostructures measured with light incidents along the normal direction to the surface.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3298705&req=5

Figure 5: Reflectance spectra. Spectral reflectance of SiGe nanostructures measured with light incidents along the normal direction to the surface.
Mentions: Nanowires may possess good antireflection properties for solar cell applications because the subwavelength scale of nanowire arrays will strongly scatter incident light and has a graded refractive index, which may enhance the incidence of light in usable wavelength range. Effective medium models predict this suggestion [16]. To find the antireflection performance on our samples, we also conduct the reflectance measurement on SiGe nanostructures grown at different temperatures. The reflection spectra were illustrated in Figure 5. Samples with a dark surface usually demonstrate reduced reflection due to enhanced absorption from the surface, but nanowires with core-shell structures may get lower reflection even though the sample has a light surface. It has been shown that core-shell nanowires exhibit good antireflection properties due to enhanced light trapping in these structures [17]. The reflectance of the sample with core-shell structures has been highly suppressed to less than 1% in the whole measured range. The nanorods grown at 405°C and 438°C have roughly the same reflectance from 350 to 450 nm. For reflection above 600 nm, both 405°C and 438°C samples start to exhibit interference effects. Since there are lower yields at 438°C than at 405°C, the sample grown at 438°C may have more thin film coating in the region where no nanorods grow. Due to the interference effects of the thin film coating, the sample grown at 438°C will show a local minimum in the reflectance curves. Therefore, it has lower reflection above 800 nm compared with the sample grown at 405°C. All the samples exhibit lower reflectance than their substrate, which means that the SiGe nanostructures have higher absorption.

Bottom Line: In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process.By controlling growth conditions, different SiGe nanostructures can be easily tuned.The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan. sclee@cc.ee.ntu.edu.tw.

ABSTRACT
With the rapid progress of nanotechnology, nanostructures with different morphologies have been realized, which may be very promising to enhance the performance of semiconductor devices. In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process. By controlling growth conditions, different SiGe nanostructures can be easily tuned. Structures and compositions of the nanostructures were determined by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The optical properties of various SiGe nanostructures revealed some dependence with their morphologies, which may be suitable for solar cell applications. The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

No MeSH data available.


Related in: MedlinePlus