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Morphology control and optical properties of SiGe nanostructures grown on glass substrate.

Chang HK, Lee SC - Nanoscale Res Lett (2012)

Bottom Line: In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process.By controlling growth conditions, different SiGe nanostructures can be easily tuned.The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan. sclee@cc.ee.ntu.edu.tw.

ABSTRACT
With the rapid progress of nanotechnology, nanostructures with different morphologies have been realized, which may be very promising to enhance the performance of semiconductor devices. In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process. By controlling growth conditions, different SiGe nanostructures can be easily tuned. Structures and compositions of the nanostructures were determined by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The optical properties of various SiGe nanostructures revealed some dependence with their morphologies, which may be suitable for solar cell applications. The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

No MeSH data available.


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SEM image and XRD data. (a) SEM image of nanowires grown at 475°C and (b) corresponding XRD patterns.
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Figure 4: SEM image and XRD data. (a) SEM image of nanowires grown at 475°C and (b) corresponding XRD patterns.

Mentions: To further explore the crystal quality of SiGe/Ge NWs, we also performed the XRD measurement. Figure 4a is the typical SEM image of as-grown SiGe/Ge NWs, which we used for XRD studies. Figure 4b shows the XRD patterns of the prepared core-shell nanostructures deposited on a glass substrate. The diffraction peaks corresponding to the (111), (220), and (311) planes of SiGe were observed. The intensity of the diffraction peak at 2θ = 28° is much stronger than the others, showing that the predominant growth direction of the core-shell NWs is mainly along [111].


Morphology control and optical properties of SiGe nanostructures grown on glass substrate.

Chang HK, Lee SC - Nanoscale Res Lett (2012)

SEM image and XRD data. (a) SEM image of nanowires grown at 475°C and (b) corresponding XRD patterns.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3298705&req=5

Figure 4: SEM image and XRD data. (a) SEM image of nanowires grown at 475°C and (b) corresponding XRD patterns.
Mentions: To further explore the crystal quality of SiGe/Ge NWs, we also performed the XRD measurement. Figure 4a is the typical SEM image of as-grown SiGe/Ge NWs, which we used for XRD studies. Figure 4b shows the XRD patterns of the prepared core-shell nanostructures deposited on a glass substrate. The diffraction peaks corresponding to the (111), (220), and (311) planes of SiGe were observed. The intensity of the diffraction peak at 2θ = 28° is much stronger than the others, showing that the predominant growth direction of the core-shell NWs is mainly along [111].

Bottom Line: In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process.By controlling growth conditions, different SiGe nanostructures can be easily tuned.The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan. sclee@cc.ee.ntu.edu.tw.

ABSTRACT
With the rapid progress of nanotechnology, nanostructures with different morphologies have been realized, which may be very promising to enhance the performance of semiconductor devices. In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process. By controlling growth conditions, different SiGe nanostructures can be easily tuned. Structures and compositions of the nanostructures were determined by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The optical properties of various SiGe nanostructures revealed some dependence with their morphologies, which may be suitable for solar cell applications. The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

No MeSH data available.


Related in: MedlinePlus