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Morphology control and optical properties of SiGe nanostructures grown on glass substrate.

Chang HK, Lee SC - Nanoscale Res Lett (2012)

Bottom Line: In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process.By controlling growth conditions, different SiGe nanostructures can be easily tuned.The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan. sclee@cc.ee.ntu.edu.tw.

ABSTRACT
With the rapid progress of nanotechnology, nanostructures with different morphologies have been realized, which may be very promising to enhance the performance of semiconductor devices. In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process. By controlling growth conditions, different SiGe nanostructures can be easily tuned. Structures and compositions of the nanostructures were determined by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The optical properties of various SiGe nanostructures revealed some dependence with their morphologies, which may be suitable for solar cell applications. The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

No MeSH data available.


Related in: MedlinePlus

TEM image and EDX data. (a) TEM image of nanowires grown at 475°C, (b) cross-sectional TEM images, (c) HAADF TEM images of a core-shell structure, and (d) EDX data from a core-shell structure.
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Figure 3: TEM image and EDX data. (a) TEM image of nanowires grown at 475°C, (b) cross-sectional TEM images, (c) HAADF TEM images of a core-shell structure, and (d) EDX data from a core-shell structure.

Mentions: A detailed microstructure information and morphology variation of the as-grown samples were further characterized by transmission electron microscopy (TEM). Figure 3a demonstrates the TEM image of the Ge shells on top of the SiGe core nanowires. Figure 3c shows the high-angle annular dark field (HAADF) TEM image in a cross-section view. The core-shell nature can be clearly differentiated from the black and white contrast. For a detailed composition of a single core-shell nanowire, see Figure 3d. Since we did not find the Au catalyst on top of the nanowire, the growth mechanism for this core-shell structure may be through the vapor-solid (VS) method [14] or a combination of the VLS and VS methods. It is known that when VLS growth has stopped, direct CVD growth may take over on the Au-covered sidewalls of the SiGe nanowires (NWs). This may lead to the deposition of Ge on the VLS-grown nanowires, which results in an increase of the nanowire diameter [15].


Morphology control and optical properties of SiGe nanostructures grown on glass substrate.

Chang HK, Lee SC - Nanoscale Res Lett (2012)

TEM image and EDX data. (a) TEM image of nanowires grown at 475°C, (b) cross-sectional TEM images, (c) HAADF TEM images of a core-shell structure, and (d) EDX data from a core-shell structure.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3298705&req=5

Figure 3: TEM image and EDX data. (a) TEM image of nanowires grown at 475°C, (b) cross-sectional TEM images, (c) HAADF TEM images of a core-shell structure, and (d) EDX data from a core-shell structure.
Mentions: A detailed microstructure information and morphology variation of the as-grown samples were further characterized by transmission electron microscopy (TEM). Figure 3a demonstrates the TEM image of the Ge shells on top of the SiGe core nanowires. Figure 3c shows the high-angle annular dark field (HAADF) TEM image in a cross-section view. The core-shell nature can be clearly differentiated from the black and white contrast. For a detailed composition of a single core-shell nanowire, see Figure 3d. Since we did not find the Au catalyst on top of the nanowire, the growth mechanism for this core-shell structure may be through the vapor-solid (VS) method [14] or a combination of the VLS and VS methods. It is known that when VLS growth has stopped, direct CVD growth may take over on the Au-covered sidewalls of the SiGe nanowires (NWs). This may lead to the deposition of Ge on the VLS-grown nanowires, which results in an increase of the nanowire diameter [15].

Bottom Line: In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process.By controlling growth conditions, different SiGe nanostructures can be easily tuned.The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan. sclee@cc.ee.ntu.edu.tw.

ABSTRACT
With the rapid progress of nanotechnology, nanostructures with different morphologies have been realized, which may be very promising to enhance the performance of semiconductor devices. In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process. By controlling growth conditions, different SiGe nanostructures can be easily tuned. Structures and compositions of the nanostructures were determined by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The optical properties of various SiGe nanostructures revealed some dependence with their morphologies, which may be suitable for solar cell applications. The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.

No MeSH data available.


Related in: MedlinePlus