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Nanoscale elastic modulus of single horizontal ZnO nanorod using nanoindentation experiment.

Soomro MY, Hussain I, Bano N, Broitman E, Nur O, Willander M - Nanoscale Res Lett (2012)

Bottom Line: The elastic modulus of the ZnO NR, extracted from the unloading curve using the well-known Oliver-Pharr method, resulted in a value of approximately 800 GPa.Also, we discuss the NR creep mechanism observed under indentation.The mechanical behavior reported in this paper will be a useful reference for the design and applications of future nanodevices.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Science and Technology, Campus Norrköping, Linköping University, Norrköping, SE-60174, Sweden. narba@itn.liu.se.

ABSTRACT
We measure the elastic modulus of a single horizontal ZnO nanorod [NR] grown by a low-temperature hydrothermal chemical process on silicon substrates by performing room-temperature, direct load-controlled nanoindentation measurements. The configuration of the experiment for the single ZnO NR was achieved using a focused ion beam/scanning electron microscope dual-beam instrument. The single ZnO NR was positioned horizontally over a hole on a silicon wafer using a nanomanipulator, and both ends were bonded with platinum, defining a three-point bending configuration. The elastic modulus of the ZnO NR, extracted from the unloading curve using the well-known Oliver-Pharr method, resulted in a value of approximately 800 GPa. Also, we discuss the NR creep mechanism observed under indentation. The mechanical behavior reported in this paper will be a useful reference for the design and applications of future nanodevices.

No MeSH data available.


Schematic diagram of a single ZnO NR. Schematic diagram of a single ZnO NR with fixed ends placed at the trenched zone on the silicon wafer substrate. Inset shows a SEM image of typical suspended NRs on the silicon wafer substrate. The white particles are the residue of broken ZnO NRs.
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Figure 3: Schematic diagram of a single ZnO NR. Schematic diagram of a single ZnO NR with fixed ends placed at the trenched zone on the silicon wafer substrate. Inset shows a SEM image of typical suspended NRs on the silicon wafer substrate. The white particles are the residue of broken ZnO NRs.

Mentions: In order to measure Young's modulus, we used a three-point bending configuration [21,22]. A schematic diagram showing a three-point bending configuration with a single horizontal ZnO NR is shown in Figure 3. The inset shows a SEM image of suspended NRs on the silicon wafer substrate; the material with the clear contrast is the residue of broken ZnO NRs.


Nanoscale elastic modulus of single horizontal ZnO nanorod using nanoindentation experiment.

Soomro MY, Hussain I, Bano N, Broitman E, Nur O, Willander M - Nanoscale Res Lett (2012)

Schematic diagram of a single ZnO NR. Schematic diagram of a single ZnO NR with fixed ends placed at the trenched zone on the silicon wafer substrate. Inset shows a SEM image of typical suspended NRs on the silicon wafer substrate. The white particles are the residue of broken ZnO NRs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3298492&req=5

Figure 3: Schematic diagram of a single ZnO NR. Schematic diagram of a single ZnO NR with fixed ends placed at the trenched zone on the silicon wafer substrate. Inset shows a SEM image of typical suspended NRs on the silicon wafer substrate. The white particles are the residue of broken ZnO NRs.
Mentions: In order to measure Young's modulus, we used a three-point bending configuration [21,22]. A schematic diagram showing a three-point bending configuration with a single horizontal ZnO NR is shown in Figure 3. The inset shows a SEM image of suspended NRs on the silicon wafer substrate; the material with the clear contrast is the residue of broken ZnO NRs.

Bottom Line: The elastic modulus of the ZnO NR, extracted from the unloading curve using the well-known Oliver-Pharr method, resulted in a value of approximately 800 GPa.Also, we discuss the NR creep mechanism observed under indentation.The mechanical behavior reported in this paper will be a useful reference for the design and applications of future nanodevices.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Science and Technology, Campus Norrköping, Linköping University, Norrköping, SE-60174, Sweden. narba@itn.liu.se.

ABSTRACT
We measure the elastic modulus of a single horizontal ZnO nanorod [NR] grown by a low-temperature hydrothermal chemical process on silicon substrates by performing room-temperature, direct load-controlled nanoindentation measurements. The configuration of the experiment for the single ZnO NR was achieved using a focused ion beam/scanning electron microscope dual-beam instrument. The single ZnO NR was positioned horizontally over a hole on a silicon wafer using a nanomanipulator, and both ends were bonded with platinum, defining a three-point bending configuration. The elastic modulus of the ZnO NR, extracted from the unloading curve using the well-known Oliver-Pharr method, resulted in a value of approximately 800 GPa. Also, we discuss the NR creep mechanism observed under indentation. The mechanical behavior reported in this paper will be a useful reference for the design and applications of future nanodevices.

No MeSH data available.