Limits...
Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications.

Sordo SD, Abbene L, Caroli E, Mancini AM, Zappettini A, Ubertini P - Sensors (Basel) (2009)

Bottom Line: Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems.In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications.Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

View Article: PubMed Central - PubMed

Affiliation: INAF/IASF Palermo, Via Ugo La Malfa 153, 90146 Palermo, Italy.

ABSTRACT
Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

No MeSH data available.


Charge collection efficiency (CCE) vs. the normalized interaction position of incoming photons. The CCE curves are calculated for different values of the λ/L ratios; (a) identical λ/L ratios for both electrons and holes; (b) the electron λ/L ratio is always 10 times greater than that of the holes.
© Copyright Policy
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3297127&req=5

f3-sensors-09-03491: Charge collection efficiency (CCE) vs. the normalized interaction position of incoming photons. The CCE curves are calculated for different values of the λ/L ratios; (a) identical λ/L ratios for both electrons and holes; (b) the electron λ/L ratio is always 10 times greater than that of the holes.

Mentions: Charge trapping and recombination are typical effects in compound semiconductors and may prevent the full charge collection. For a planar detector, having a uniform electric field, neglecting charge de-trapping, the charge collection efficiency (CCE), i.e. the induced charge normalized to the generated total charge, is given by the Hecht equation [13]:(4)CCE=QQ0=[λhL(1−e−xλh)+λeL(1−e−L−xλe)]where λh= μhτhE and λe = μeτeE are the mean drift lengths of holes and electrons, respectively. The CCE depends not only on λh and λe, but also on the incoming photon interaction position. The random distribution of the interaction point increases the fluctuations on the induced charge and thus produces peak broadening in the energy spectrum. Small λ/L ratios reduce the CCE and increase the dependence by the interaction point, as shown in Figure 3.


Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications.

Sordo SD, Abbene L, Caroli E, Mancini AM, Zappettini A, Ubertini P - Sensors (Basel) (2009)

Charge collection efficiency (CCE) vs. the normalized interaction position of incoming photons. The CCE curves are calculated for different values of the λ/L ratios; (a) identical λ/L ratios for both electrons and holes; (b) the electron λ/L ratio is always 10 times greater than that of the holes.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3297127&req=5

f3-sensors-09-03491: Charge collection efficiency (CCE) vs. the normalized interaction position of incoming photons. The CCE curves are calculated for different values of the λ/L ratios; (a) identical λ/L ratios for both electrons and holes; (b) the electron λ/L ratio is always 10 times greater than that of the holes.
Mentions: Charge trapping and recombination are typical effects in compound semiconductors and may prevent the full charge collection. For a planar detector, having a uniform electric field, neglecting charge de-trapping, the charge collection efficiency (CCE), i.e. the induced charge normalized to the generated total charge, is given by the Hecht equation [13]:(4)CCE=QQ0=[λhL(1−e−xλh)+λeL(1−e−L−xλe)]where λh= μhτhE and λe = μeτeE are the mean drift lengths of holes and electrons, respectively. The CCE depends not only on λh and λe, but also on the incoming photon interaction position. The random distribution of the interaction point increases the fluctuations on the induced charge and thus produces peak broadening in the energy spectrum. Small λ/L ratios reduce the CCE and increase the dependence by the interaction point, as shown in Figure 3.

Bottom Line: Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems.In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications.Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

View Article: PubMed Central - PubMed

Affiliation: INAF/IASF Palermo, Via Ugo La Malfa 153, 90146 Palermo, Italy.

ABSTRACT
Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

No MeSH data available.