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Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications.

Sordo SD, Abbene L, Caroli E, Mancini AM, Zappettini A, Ubertini P - Sensors (Basel) (2009)

Bottom Line: Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems.In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications.Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

View Article: PubMed Central - PubMed

Affiliation: INAF/IASF Palermo, Via Ugo La Malfa 153, 90146 Palermo, Italy.

ABSTRACT
Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

No MeSH data available.


2-inch as-grown CdZnTe crystal.
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f11-sensors-09-03491: 2-inch as-grown CdZnTe crystal.

Mentions: The furnace has three independent heating zones. The thermal gradient at the melt/crystal interface is about 10 °C/cm. Before the growth, the pre-synthesized polycrystalline CdZnTe material is heat-treated in order to obtain a definite composition, than it is charged inside a quartz ampoule [44]. A boron oxide pellet is located above the material. At the beginning, the ampoule is kept in the upper part of the furnace. The temperature of the furnace is increased, so that at about 450 °C boron oxide starts softening. The furnace chamber is pressurized with inert gas at 6 – 10 atm. After the charge melting, the ampoule is lowered with a speed of 1 – 2 mm/h and the growth starts. No seeding procedure was ever employed. At the end of the growth, the crystal is removed from the ampoule by putting it into water. This causes the boron oxide to expand and break the ampoule walls. The eventual mass losses during the growth are determined by comparing the weight of the crystal and the weigh of the polycrystalline charge. Whenever growth procedure was correctly carried out, no mass losses were detected. In Figure 11 a 2-inch CdZnTe crystal is shown. The surface of the crystals is always shiny.


Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications.

Sordo SD, Abbene L, Caroli E, Mancini AM, Zappettini A, Ubertini P - Sensors (Basel) (2009)

2-inch as-grown CdZnTe crystal.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3297127&req=5

f11-sensors-09-03491: 2-inch as-grown CdZnTe crystal.
Mentions: The furnace has three independent heating zones. The thermal gradient at the melt/crystal interface is about 10 °C/cm. Before the growth, the pre-synthesized polycrystalline CdZnTe material is heat-treated in order to obtain a definite composition, than it is charged inside a quartz ampoule [44]. A boron oxide pellet is located above the material. At the beginning, the ampoule is kept in the upper part of the furnace. The temperature of the furnace is increased, so that at about 450 °C boron oxide starts softening. The furnace chamber is pressurized with inert gas at 6 – 10 atm. After the charge melting, the ampoule is lowered with a speed of 1 – 2 mm/h and the growth starts. No seeding procedure was ever employed. At the end of the growth, the crystal is removed from the ampoule by putting it into water. This causes the boron oxide to expand and break the ampoule walls. The eventual mass losses during the growth are determined by comparing the weight of the crystal and the weigh of the polycrystalline charge. Whenever growth procedure was correctly carried out, no mass losses were detected. In Figure 11 a 2-inch CdZnTe crystal is shown. The surface of the crystals is always shiny.

Bottom Line: Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems.In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications.Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

View Article: PubMed Central - PubMed

Affiliation: INAF/IASF Palermo, Via Ugo La Malfa 153, 90146 Palermo, Italy.

ABSTRACT
Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

No MeSH data available.