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SiOx/SiNy multilayers for photovoltaic and photonic applications.

Nalini RP, Khomenkova L, Debieu O, Cardin J, Dufour C, Carrada M, Gourbilleau F - Nanoscale Res Lett (2012)

Bottom Line: This letter demonstrates the advantages of using SiNy as the alternating sublayer instead of SiO2.A high density of silicon nanoclusters of the order 1019 nc/cm3 is achieved in the SiOx sublayers.Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications.

View Article: PubMed Central - HTML - PubMed

Affiliation: CIMAP UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bd, Maréchal Juin, 14050 Caen Cedex 4, France. pratibha-nalini.sundar@ensicaen.fr.

ABSTRACT
Microstructural, electrical, and optical properties of undoped and Nd3+-doped SiOx/SiNy multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiNy as the alternating sublayer instead of SiO2. A high density of silicon nanoclusters of the order 1019 nc/cm3 is achieved in the SiOx sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd3+ emission in these multilayers in comparison with the SiOx/SiO2 counterparts offers promising future photonic applications.PACS: 88.40.fh (Advanced materials development), 81.15.cd (Deposition by sputtering), 78.67.bf (Nanocrystals, nanoparticles, and nanoclusters).

No MeSH data available.


Photoluminescence. (a) Maximum PL intensity [IPL] of SiOx/SiNy MLs vs TA and tA, and SiOx/SiO2 at 1,100°C; (b) PL spectra of STA SiOx/SiNy MLs; (c) IPL vs TA for tA = 1 min. The asterisk represents the peak from second order emission of laser.
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Figure 2: Photoluminescence. (a) Maximum PL intensity [IPL] of SiOx/SiNy MLs vs TA and tA, and SiOx/SiO2 at 1,100°C; (b) PL spectra of STA SiOx/SiNy MLs; (c) IPL vs TA for tA = 1 min. The asterisk represents the peak from second order emission of laser.

Mentions: Since an annealing at TA = 1,100°C and tA = 60 min is the most suitable to achieve an efficient PL from Si-ncs either in sputtered SiOx single layers [7] or in SiOx /SiO2 MLs [16], such treatment was first employed on SiOx/SiNy MLs. The X-ray diffraction [XRD] broad peak centered around 2θ = 28° is the signature of the Si nanoclusters' formation in the SiOx /SiO2 (Figure 1, curve 1) and SiOx/SiNy MLs (Figure 1, curve 2) as already observed by means of atomic scale studies on similar multilayers [17]. However, contrary to the PL emission obtained from the SiOx/SiO2 MLs, no PL emission was observed in the SiOx/SiNy MLs after such annealing (Figure 2a). This stimulated a deeper investigation of the post-fabrication processing to achieve efficient light emission from the SiOx/SiNy MLs.


SiOx/SiNy multilayers for photovoltaic and photonic applications.

Nalini RP, Khomenkova L, Debieu O, Cardin J, Dufour C, Carrada M, Gourbilleau F - Nanoscale Res Lett (2012)

Photoluminescence. (a) Maximum PL intensity [IPL] of SiOx/SiNy MLs vs TA and tA, and SiOx/SiO2 at 1,100°C; (b) PL spectra of STA SiOx/SiNy MLs; (c) IPL vs TA for tA = 1 min. The asterisk represents the peak from second order emission of laser.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3293743&req=5

Figure 2: Photoluminescence. (a) Maximum PL intensity [IPL] of SiOx/SiNy MLs vs TA and tA, and SiOx/SiO2 at 1,100°C; (b) PL spectra of STA SiOx/SiNy MLs; (c) IPL vs TA for tA = 1 min. The asterisk represents the peak from second order emission of laser.
Mentions: Since an annealing at TA = 1,100°C and tA = 60 min is the most suitable to achieve an efficient PL from Si-ncs either in sputtered SiOx single layers [7] or in SiOx /SiO2 MLs [16], such treatment was first employed on SiOx/SiNy MLs. The X-ray diffraction [XRD] broad peak centered around 2θ = 28° is the signature of the Si nanoclusters' formation in the SiOx /SiO2 (Figure 1, curve 1) and SiOx/SiNy MLs (Figure 1, curve 2) as already observed by means of atomic scale studies on similar multilayers [17]. However, contrary to the PL emission obtained from the SiOx/SiO2 MLs, no PL emission was observed in the SiOx/SiNy MLs after such annealing (Figure 2a). This stimulated a deeper investigation of the post-fabrication processing to achieve efficient light emission from the SiOx/SiNy MLs.

Bottom Line: This letter demonstrates the advantages of using SiNy as the alternating sublayer instead of SiO2.A high density of silicon nanoclusters of the order 1019 nc/cm3 is achieved in the SiOx sublayers.Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications.

View Article: PubMed Central - HTML - PubMed

Affiliation: CIMAP UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bd, Maréchal Juin, 14050 Caen Cedex 4, France. pratibha-nalini.sundar@ensicaen.fr.

ABSTRACT
Microstructural, electrical, and optical properties of undoped and Nd3+-doped SiOx/SiNy multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiNy as the alternating sublayer instead of SiO2. A high density of silicon nanoclusters of the order 1019 nc/cm3 is achieved in the SiOx sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd3+ emission in these multilayers in comparison with the SiOx/SiO2 counterparts offers promising future photonic applications.PACS: 88.40.fh (Advanced materials development), 81.15.cd (Deposition by sputtering), 78.67.bf (Nanocrystals, nanoparticles, and nanoclusters).

No MeSH data available.