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Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum.

Gao L, Ren W, Xu H, Jin L, Wang Z, Ma T, Ma LP, Zhang Z, Fu Q, Peng LM, Bao X, Cheng HM - Nat Commun (2012)

Bottom Line: The Pt substrates can be repeatedly used for graphene growth.The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm(2) V(-1) s(-1) under ambient conditions.The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.

View Article: PubMed Central - PubMed

Affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, China.

ABSTRACT
Large single-crystal graphene is highly desired and important for the applications of graphene in electronics, as grain boundaries between graphene grains markedly degrade its quality and properties. Here we report the growth of millimetre-sized hexagonal single-crystal graphene and graphene films joined from such grains on Pt by ambient-pressure chemical vapour deposition. We report a bubbling method to transfer these single graphene grains and graphene films to arbitrary substrate, which is nondestructive not only to graphene, but also to the Pt substrates. The Pt substrates can be repeatedly used for graphene growth. The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm(2) V(-1) s(-1) under ambient conditions. The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.

No MeSH data available.


Transport property of single-crystal graphene transferred from Pt to a Si/SiO2 substrate.(a) Optical image of a back-gate graphene field-effect transistor. The scale bar is 5 μm. (b) Device resistance versus back-gate voltage (VBG) of this graphene field-effect transistor. (c) Device resistance versus VBG−VDirac, BG (VBG at the Dirac point) and with a model fit (solid red line).
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f6: Transport property of single-crystal graphene transferred from Pt to a Si/SiO2 substrate.(a) Optical image of a back-gate graphene field-effect transistor. The scale bar is 5 μm. (b) Device resistance versus back-gate voltage (VBG) of this graphene field-effect transistor. (c) Device resistance versus VBG−VDirac, BG (VBG at the Dirac point) and with a model fit (solid red line).

Mentions: To evaluate the electronic quality of the transferred graphene, we fabricated back-gate field-effect transistors on Si/SiO2 substrates, using Ti/Au (5/40 nm) as the source and drain electrodes with a separation of 10 μm. All the transport characteristics of the device were measured in a probe station under ambient conditions. Along with a device model36 that combines the minimum carrier density at the Dirac point, the dielectric and the quantum capacitances, the measured data and the fitting result are shown in Fig. 6. Consistent with Raman measurements, the positive Dirac point indicates that the transferred graphene is p-type-doped. The extracted carrier mobility of electrons and holes for this device is ~7,100 cm2 V−1 s−1, with the residual carrier concentration at the Dirac point of n0=~2×1011 cm−2. This mobility is larger than, or comparable to, those of single-crystal graphene on Si/SiO2 substrates recently reported in the literature, for example, ~4,000 cm2 V−1 s−1 for dendritic graphene obtained by room temperature field-effect transistor measurements19 and <1,000–10,000 cm2 V−1 s−1 for hexagonal single-crystal graphene obtained by low-temperature Hall measurements22. We believe that the carrier mobility of the single-crystal graphene grown on Pt can be further improved by using boron nitride substrates3738 to reduce the charge impurities trapped in SiO2.


Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum.

Gao L, Ren W, Xu H, Jin L, Wang Z, Ma T, Ma LP, Zhang Z, Fu Q, Peng LM, Bao X, Cheng HM - Nat Commun (2012)

Transport property of single-crystal graphene transferred from Pt to a Si/SiO2 substrate.(a) Optical image of a back-gate graphene field-effect transistor. The scale bar is 5 μm. (b) Device resistance versus back-gate voltage (VBG) of this graphene field-effect transistor. (c) Device resistance versus VBG−VDirac, BG (VBG at the Dirac point) and with a model fit (solid red line).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3293422&req=5

f6: Transport property of single-crystal graphene transferred from Pt to a Si/SiO2 substrate.(a) Optical image of a back-gate graphene field-effect transistor. The scale bar is 5 μm. (b) Device resistance versus back-gate voltage (VBG) of this graphene field-effect transistor. (c) Device resistance versus VBG−VDirac, BG (VBG at the Dirac point) and with a model fit (solid red line).
Mentions: To evaluate the electronic quality of the transferred graphene, we fabricated back-gate field-effect transistors on Si/SiO2 substrates, using Ti/Au (5/40 nm) as the source and drain electrodes with a separation of 10 μm. All the transport characteristics of the device were measured in a probe station under ambient conditions. Along with a device model36 that combines the minimum carrier density at the Dirac point, the dielectric and the quantum capacitances, the measured data and the fitting result are shown in Fig. 6. Consistent with Raman measurements, the positive Dirac point indicates that the transferred graphene is p-type-doped. The extracted carrier mobility of electrons and holes for this device is ~7,100 cm2 V−1 s−1, with the residual carrier concentration at the Dirac point of n0=~2×1011 cm−2. This mobility is larger than, or comparable to, those of single-crystal graphene on Si/SiO2 substrates recently reported in the literature, for example, ~4,000 cm2 V−1 s−1 for dendritic graphene obtained by room temperature field-effect transistor measurements19 and <1,000–10,000 cm2 V−1 s−1 for hexagonal single-crystal graphene obtained by low-temperature Hall measurements22. We believe that the carrier mobility of the single-crystal graphene grown on Pt can be further improved by using boron nitride substrates3738 to reduce the charge impurities trapped in SiO2.

Bottom Line: The Pt substrates can be repeatedly used for graphene growth.The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm(2) V(-1) s(-1) under ambient conditions.The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.

View Article: PubMed Central - PubMed

Affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, China.

ABSTRACT
Large single-crystal graphene is highly desired and important for the applications of graphene in electronics, as grain boundaries between graphene grains markedly degrade its quality and properties. Here we report the growth of millimetre-sized hexagonal single-crystal graphene and graphene films joined from such grains on Pt by ambient-pressure chemical vapour deposition. We report a bubbling method to transfer these single graphene grains and graphene films to arbitrary substrate, which is nondestructive not only to graphene, but also to the Pt substrates. The Pt substrates can be repeatedly used for graphene growth. The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm(2) V(-1) s(-1) under ambient conditions. The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.

No MeSH data available.