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A study on the characteristics of plasma polymer thin film with controlled nitrogen flow rate.

Cho SJ, Boo JH - Nanoscale Res Lett (2012)

Bottom Line: Additionally, nitrogen gas [N2] was used as nitrogen dopant.Furthermore, additional argon was used as a carrier gas.The ellipsometry results showed the refractive index change of the N-ThioPP film.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, South Korea. jhboo@skku.edu.

ABSTRACT
Nitrogen-doped thiophene plasma polymer [N-ThioPP] thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Thiophene was used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, nitrogen gas [N2] was used as nitrogen dopant. Furthermore, additional argon was used as a carrier gas. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-ThioPP film. The FT-IR spectra showed that the N-ThioPP films were completely fragmented and polymerized from thiophene.

No MeSH data available.


Related in: MedlinePlus

A schematic diagram of the home-made PECVD system.
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Figure 1: A schematic diagram of the home-made PECVD system.

Mentions: The experiment was carried out in a homemade stainless-steel PECVD system as shown in Figure 1. Silicon(100) wafers were wet-cleaned by sonication with acetone, ethyl alcohol, distilled water, and isopropyl alcohol and dried by N2 gas blowing. Also, substrates were dry-cleaned by in situ Ar plasma bombardment with 100 W for 15 min. The plasma polymer thin films were deposited by PECVD method. Thiophene was utilized as organic precursor. Thiophene was preheated up to 60°C and bubbled by 50 sccm of hydrogen gas. Additionally, 50 sccm of argon gas was used as a carrier gas. The deposition time was 45 min to make the same thickness at 1 μm. The deposition pressure and temperature were 4.0 × 10-1 Torr and 25°C, respectively. The typical conditions of the PECVD process applied in this study for film deposition are 0, 20, 30, 40, and 50 sccm of N2 gas flow.


A study on the characteristics of plasma polymer thin film with controlled nitrogen flow rate.

Cho SJ, Boo JH - Nanoscale Res Lett (2012)

A schematic diagram of the home-made PECVD system.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3285046&req=5

Figure 1: A schematic diagram of the home-made PECVD system.
Mentions: The experiment was carried out in a homemade stainless-steel PECVD system as shown in Figure 1. Silicon(100) wafers were wet-cleaned by sonication with acetone, ethyl alcohol, distilled water, and isopropyl alcohol and dried by N2 gas blowing. Also, substrates were dry-cleaned by in situ Ar plasma bombardment with 100 W for 15 min. The plasma polymer thin films were deposited by PECVD method. Thiophene was utilized as organic precursor. Thiophene was preheated up to 60°C and bubbled by 50 sccm of hydrogen gas. Additionally, 50 sccm of argon gas was used as a carrier gas. The deposition time was 45 min to make the same thickness at 1 μm. The deposition pressure and temperature were 4.0 × 10-1 Torr and 25°C, respectively. The typical conditions of the PECVD process applied in this study for film deposition are 0, 20, 30, 40, and 50 sccm of N2 gas flow.

Bottom Line: Additionally, nitrogen gas [N2] was used as nitrogen dopant.Furthermore, additional argon was used as a carrier gas.The ellipsometry results showed the refractive index change of the N-ThioPP film.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, South Korea. jhboo@skku.edu.

ABSTRACT
Nitrogen-doped thiophene plasma polymer [N-ThioPP] thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Thiophene was used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, nitrogen gas [N2] was used as nitrogen dopant. Furthermore, additional argon was used as a carrier gas. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-ThioPP film. The FT-IR spectra showed that the N-ThioPP films were completely fragmented and polymerized from thiophene.

No MeSH data available.


Related in: MedlinePlus