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Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC.

Kang MS, Ahn JJ, Moon KS, Koo SM - Nanoscale Res Lett (2012)

Bottom Line: Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC.It has been shown that the barrier height of the fabricated SiC diode structures (Ni with embedded Ag-NPs) has significantly reduced by 0.11 eV and 0.18 eV with respect to the samples with Au-NPs and the reference samples, respectively.The experimental results have also been compared with both an analytic model based on Tung's theory and physics-based two-dimensional numerical simulations.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul, 139-701, South Korea. smkoo@kw.ac.kr.

ABSTRACT
Metal, typically gold [Au], nanoparticles [NPs] embedded in a capping metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original contacts. Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC. It has been shown that the barrier height of the fabricated SiC diode structures (Ni with embedded Ag-NPs) has significantly reduced by 0.11 eV and 0.18 eV with respect to the samples with Au-NPs and the reference samples, respectively. The experimental results have also been compared with both an analytic model based on Tung's theory and physics-based two-dimensional numerical simulations.

No MeSH data available.


1/C2 versus reverse voltage characteristics. 1/C2 versus reverse voltage for n-type of Ni film without NPs (Ref), Ni film with embedded Au-NPs (NP-1), and Ni film with embedded Ag-NPs (NP-2) to 4H-SiC at a frequency of 1 MHz at 300 K. The contact area is 3.14 × 10-2 cm-2.
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Figure 4: 1/C2 versus reverse voltage characteristics. 1/C2 versus reverse voltage for n-type of Ni film without NPs (Ref), Ni film with embedded Au-NPs (NP-1), and Ni film with embedded Ag-NPs (NP-2) to 4H-SiC at a frequency of 1 MHz at 300 K. The contact area is 3.14 × 10-2 cm-2.

Mentions: where, A is the contact area of the diode (3.14 × 10-2 cm2), KS is the semiconductor dielectric constant for 4H-SiC (6.52 at high frequency), and ε0 is the permittivity free space charge. Figure 4 shows the 1/C2 versus reverse voltage characteristics measured at a frequency of 1 MHz at room temperature. The straight line intercepts of the 1/C2-V characteristics with voltage axis are obtained, and thus, the barrier height values can be given as follows [23]:


Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC.

Kang MS, Ahn JJ, Moon KS, Koo SM - Nanoscale Res Lett (2012)

1/C2 versus reverse voltage characteristics. 1/C2 versus reverse voltage for n-type of Ni film without NPs (Ref), Ni film with embedded Au-NPs (NP-1), and Ni film with embedded Ag-NPs (NP-2) to 4H-SiC at a frequency of 1 MHz at 300 K. The contact area is 3.14 × 10-2 cm-2.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3285043&req=5

Figure 4: 1/C2 versus reverse voltage characteristics. 1/C2 versus reverse voltage for n-type of Ni film without NPs (Ref), Ni film with embedded Au-NPs (NP-1), and Ni film with embedded Ag-NPs (NP-2) to 4H-SiC at a frequency of 1 MHz at 300 K. The contact area is 3.14 × 10-2 cm-2.
Mentions: where, A is the contact area of the diode (3.14 × 10-2 cm2), KS is the semiconductor dielectric constant for 4H-SiC (6.52 at high frequency), and ε0 is the permittivity free space charge. Figure 4 shows the 1/C2 versus reverse voltage characteristics measured at a frequency of 1 MHz at room temperature. The straight line intercepts of the 1/C2-V characteristics with voltage axis are obtained, and thus, the barrier height values can be given as follows [23]:

Bottom Line: Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC.It has been shown that the barrier height of the fabricated SiC diode structures (Ni with embedded Ag-NPs) has significantly reduced by 0.11 eV and 0.18 eV with respect to the samples with Au-NPs and the reference samples, respectively.The experimental results have also been compared with both an analytic model based on Tung's theory and physics-based two-dimensional numerical simulations.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul, 139-701, South Korea. smkoo@kw.ac.kr.

ABSTRACT
Metal, typically gold [Au], nanoparticles [NPs] embedded in a capping metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original contacts. Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC. It has been shown that the barrier height of the fabricated SiC diode structures (Ni with embedded Ag-NPs) has significantly reduced by 0.11 eV and 0.18 eV with respect to the samples with Au-NPs and the reference samples, respectively. The experimental results have also been compared with both an analytic model based on Tung's theory and physics-based two-dimensional numerical simulations.

No MeSH data available.