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Atom devices based on single dopants in silicon nanostructures.

Moraru D, Udhiarto A, Anwar M, Nowak R, Jablonski R, Hamid E, Tarido JC, Mizuno T, Tabe M - Nanoscale Res Lett (2011)

Bottom Line: Such technological trend brought us to a research stage on devices working with one or a few dopant atoms.In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism.These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, 432-8011, Japan. romtabe@rie.shizuoka.ac.jp.

ABSTRACT
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

No MeSH data available.


Related in: MedlinePlus

Schematic overview of research directions on individual dopants or coupled dopants in semiconductor devices. Individual donors, either isolated or in a many-donor channel, can be at the basis of a variety of applications: single dopant transistors, memory or turnstile devices in double- or multiple-dopant systems, and dopant optoelectronic devices based on photon-dopant interaction. Complementary directions can be towards dopant quantum computing or spintronics applications, as well as towards addressing the issue of random dopants in FETs. KFM can provide a way to directly observe effects associated with discrete dopants in operating devices.
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Figure 6: Schematic overview of research directions on individual dopants or coupled dopants in semiconductor devices. Individual donors, either isolated or in a many-donor channel, can be at the basis of a variety of applications: single dopant transistors, memory or turnstile devices in double- or multiple-dopant systems, and dopant optoelectronic devices based on photon-dopant interaction. Complementary directions can be towards dopant quantum computing or spintronics applications, as well as towards addressing the issue of random dopants in FETs. KFM can provide a way to directly observe effects associated with discrete dopants in operating devices.

Mentions: A simple overview on the possible directions of research involving individual dopants, either isolated or in dopant-rich channels, is shown in Figure 6. Single-dopant transistors can become attractive candidates for applications involving electron transport at atomic level. Studies of coupled donors in nanostructures may reveal more complex properties that arise from interactions among donors and between donors and interfaces. Dopant-based optoelectronic devices can be conceived based on studies of photon illumination on dopant arrays. In addition, active research in controlling and monitoring of discrete dopants in working devices will support the steady development of single-dopant electronics. Quantum computing, dopant spintronics, and challenges related to dopant distribution in conventional FETs will continue as important components for understanding individual dopant properties. All these directions will converge in creating a rich research environment able to push the silicon-based electronics industry beyond the limits of the Moore's law and into atomic scale functionalities. It is also essential to note that the properties of the dopants significantly change when the donors are located in nanostructures, compared to bulk. A basic finding is that dopants embedded in nanowires may have an enhanced binding energy due to dielectric or quantum confinement [21]. We suggest that this effect can play a key role in the development of single-dopant devices operating at higher temperatures and further studies may reveal the guidelines to utilize this effect up to room temperature.


Atom devices based on single dopants in silicon nanostructures.

Moraru D, Udhiarto A, Anwar M, Nowak R, Jablonski R, Hamid E, Tarido JC, Mizuno T, Tabe M - Nanoscale Res Lett (2011)

Schematic overview of research directions on individual dopants or coupled dopants in semiconductor devices. Individual donors, either isolated or in a many-donor channel, can be at the basis of a variety of applications: single dopant transistors, memory or turnstile devices in double- or multiple-dopant systems, and dopant optoelectronic devices based on photon-dopant interaction. Complementary directions can be towards dopant quantum computing or spintronics applications, as well as towards addressing the issue of random dopants in FETs. KFM can provide a way to directly observe effects associated with discrete dopants in operating devices.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211992&req=5

Figure 6: Schematic overview of research directions on individual dopants or coupled dopants in semiconductor devices. Individual donors, either isolated or in a many-donor channel, can be at the basis of a variety of applications: single dopant transistors, memory or turnstile devices in double- or multiple-dopant systems, and dopant optoelectronic devices based on photon-dopant interaction. Complementary directions can be towards dopant quantum computing or spintronics applications, as well as towards addressing the issue of random dopants in FETs. KFM can provide a way to directly observe effects associated with discrete dopants in operating devices.
Mentions: A simple overview on the possible directions of research involving individual dopants, either isolated or in dopant-rich channels, is shown in Figure 6. Single-dopant transistors can become attractive candidates for applications involving electron transport at atomic level. Studies of coupled donors in nanostructures may reveal more complex properties that arise from interactions among donors and between donors and interfaces. Dopant-based optoelectronic devices can be conceived based on studies of photon illumination on dopant arrays. In addition, active research in controlling and monitoring of discrete dopants in working devices will support the steady development of single-dopant electronics. Quantum computing, dopant spintronics, and challenges related to dopant distribution in conventional FETs will continue as important components for understanding individual dopant properties. All these directions will converge in creating a rich research environment able to push the silicon-based electronics industry beyond the limits of the Moore's law and into atomic scale functionalities. It is also essential to note that the properties of the dopants significantly change when the donors are located in nanostructures, compared to bulk. A basic finding is that dopants embedded in nanowires may have an enhanced binding energy due to dielectric or quantum confinement [21]. We suggest that this effect can play a key role in the development of single-dopant devices operating at higher temperatures and further studies may reveal the guidelines to utilize this effect up to room temperature.

Bottom Line: Such technological trend brought us to a research stage on devices working with one or a few dopant atoms.In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism.These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, 432-8011, Japan. romtabe@rie.shizuoka.ac.jp.

ABSTRACT
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

No MeSH data available.


Related in: MedlinePlus