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Atom devices based on single dopants in silicon nanostructures.

Moraru D, Udhiarto A, Anwar M, Nowak R, Jablonski R, Hamid E, Tarido JC, Mizuno T, Tabe M - Nanoscale Res Lett (2011)

Bottom Line: Such technological trend brought us to a research stage on devices working with one or a few dopant atoms.In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism.These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, 432-8011, Japan. romtabe@rie.shizuoka.ac.jp.

ABSTRACT
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

No MeSH data available.


Related in: MedlinePlus

Single-electron transfer between two donors. (a) Low-temperature ID-VG characteristics showing a single-donor current peak used as a sensor for detecting charging and discharging of a neighboring donor. (b)-(c) Charging and discharging are sensed as abrupt jumps of the current (producing a hysteresis between up-ramping and down-ramping curves) and (d) as RTS in the time-domain measurements.
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Figure 3: Single-electron transfer between two donors. (a) Low-temperature ID-VG characteristics showing a single-donor current peak used as a sensor for detecting charging and discharging of a neighboring donor. (b)-(c) Charging and discharging are sensed as abrupt jumps of the current (producing a hysteresis between up-ramping and down-ramping curves) and (d) as RTS in the time-domain measurements.

Mentions: We have focused on identifying signatures of such a double-donor system among our devices, which contain donors randomly distributed in the channel [23]. The first target was to select devices that exhibit characteristics with a single isolated first peak. As also described in the previous section, a single isolated current peak can be found when only one donor-induced QD controls electron transport, i.e., when the single-electron tunneling conduction path contains only one donor [13]. When the gate voltage aligns the conduction path donor's energy with the source/drain Fermi level, conduction through the device starts. Characteristics for such a device are shown in Figure 3a.


Atom devices based on single dopants in silicon nanostructures.

Moraru D, Udhiarto A, Anwar M, Nowak R, Jablonski R, Hamid E, Tarido JC, Mizuno T, Tabe M - Nanoscale Res Lett (2011)

Single-electron transfer between two donors. (a) Low-temperature ID-VG characteristics showing a single-donor current peak used as a sensor for detecting charging and discharging of a neighboring donor. (b)-(c) Charging and discharging are sensed as abrupt jumps of the current (producing a hysteresis between up-ramping and down-ramping curves) and (d) as RTS in the time-domain measurements.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211992&req=5

Figure 3: Single-electron transfer between two donors. (a) Low-temperature ID-VG characteristics showing a single-donor current peak used as a sensor for detecting charging and discharging of a neighboring donor. (b)-(c) Charging and discharging are sensed as abrupt jumps of the current (producing a hysteresis between up-ramping and down-ramping curves) and (d) as RTS in the time-domain measurements.
Mentions: We have focused on identifying signatures of such a double-donor system among our devices, which contain donors randomly distributed in the channel [23]. The first target was to select devices that exhibit characteristics with a single isolated first peak. As also described in the previous section, a single isolated current peak can be found when only one donor-induced QD controls electron transport, i.e., when the single-electron tunneling conduction path contains only one donor [13]. When the gate voltage aligns the conduction path donor's energy with the source/drain Fermi level, conduction through the device starts. Characteristics for such a device are shown in Figure 3a.

Bottom Line: Such technological trend brought us to a research stage on devices working with one or a few dopant atoms.In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism.These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, 432-8011, Japan. romtabe@rie.shizuoka.ac.jp.

ABSTRACT
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

No MeSH data available.


Related in: MedlinePlus