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Atom devices based on single dopants in silicon nanostructures.

Moraru D, Udhiarto A, Anwar M, Nowak R, Jablonski R, Hamid E, Tarido JC, Mizuno T, Tabe M - Nanoscale Res Lett (2011)

Bottom Line: Such technological trend brought us to a research stage on devices working with one or a few dopant atoms.In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism.These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, 432-8011, Japan. romtabe@rie.shizuoka.ac.jp.

ABSTRACT
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

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Operation of a single dopant transistor. (a) Schematic illustration of a single-donor transistor, in this case a transistor that contains one donor in its nanoscale channel. (b) The conduction path donor mediates single-electron tunneling from source to drain, giving rise to a current peak in the low-temperature transfer characteristics (c).
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Figure 1: Operation of a single dopant transistor. (a) Schematic illustration of a single-donor transistor, in this case a transistor that contains one donor in its nanoscale channel. (b) The conduction path donor mediates single-electron tunneling from source to drain, giving rise to a current peak in the low-temperature transfer characteristics (c).

Mentions: Recently, breakthrough results indicate the possibility of individually addressing dopants in silicon, as illustrated in Figure 1. When the dopant is located in a nanoscale-channel field-effect transistor (FET), single-electron tunneling via the dopant-induced quantum dot (QD) gives rise to measurable currents. Results illustrating this operation mode have been obtained at cryogenic or low temperature in transistors containing in their channel one or only a few dopant atoms. Single-electron tunneling spectroscopy of arsenic (As) donors, located in the edges of FinFET channels, was performed at cryogenic temperatures [8-10]. Acceptors, such as boron (B), were also directly identified in low-temperature transport characteristics of silicon-on-insulator (SOI) FETs [11,12]. Individual dopants can be accessed even in dopant-rich environments, where the channel contains more than only one isolated dopant atom [13]. In order to observe individual donor and/or acceptor impurities, scanning probe techniques are typically used, among which Kelvin probe force microscopy (KFM) allowed mapping of dopants in channels of Si nanodevices under normal operation conditions [14,15].


Atom devices based on single dopants in silicon nanostructures.

Moraru D, Udhiarto A, Anwar M, Nowak R, Jablonski R, Hamid E, Tarido JC, Mizuno T, Tabe M - Nanoscale Res Lett (2011)

Operation of a single dopant transistor. (a) Schematic illustration of a single-donor transistor, in this case a transistor that contains one donor in its nanoscale channel. (b) The conduction path donor mediates single-electron tunneling from source to drain, giving rise to a current peak in the low-temperature transfer characteristics (c).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211992&req=5

Figure 1: Operation of a single dopant transistor. (a) Schematic illustration of a single-donor transistor, in this case a transistor that contains one donor in its nanoscale channel. (b) The conduction path donor mediates single-electron tunneling from source to drain, giving rise to a current peak in the low-temperature transfer characteristics (c).
Mentions: Recently, breakthrough results indicate the possibility of individually addressing dopants in silicon, as illustrated in Figure 1. When the dopant is located in a nanoscale-channel field-effect transistor (FET), single-electron tunneling via the dopant-induced quantum dot (QD) gives rise to measurable currents. Results illustrating this operation mode have been obtained at cryogenic or low temperature in transistors containing in their channel one or only a few dopant atoms. Single-electron tunneling spectroscopy of arsenic (As) donors, located in the edges of FinFET channels, was performed at cryogenic temperatures [8-10]. Acceptors, such as boron (B), were also directly identified in low-temperature transport characteristics of silicon-on-insulator (SOI) FETs [11,12]. Individual dopants can be accessed even in dopant-rich environments, where the channel contains more than only one isolated dopant atom [13]. In order to observe individual donor and/or acceptor impurities, scanning probe techniques are typically used, among which Kelvin probe force microscopy (KFM) allowed mapping of dopants in channels of Si nanodevices under normal operation conditions [14,15].

Bottom Line: Such technological trend brought us to a research stage on devices working with one or a few dopant atoms.In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism.These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, 432-8011, Japan. romtabe@rie.shizuoka.ac.jp.

ABSTRACT
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

No MeSH data available.


Related in: MedlinePlus