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Combinatorial growth of Si nanoribbons.

Park TE, Lee KY, Kim I, Chang J, Voorhees P, Choi HJ - Nanoscale Res Lett (2011)

Bottom Line: These twins appear to drive the lateral growth by a reentrant twin mechanism.These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction.These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twin-assisted VS mechanism for lateral growth.

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Affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea. hjc@yonsei.ac.kr.

ABSTRACT
Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of saw-like edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twin-assisted VS mechanism for lateral growth.

No MeSH data available.


SEM image of Si NRs. (a) Typical SEM image of Si NRs grown on a Si substrate. (b) SEM images of an individual Si NR.
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Figure 1: SEM image of Si NRs. (a) Typical SEM image of Si NRs grown on a Si substrate. (b) SEM images of an individual Si NR.

Mentions: Si NRs were synthesized on Si substrates assisted by Pt as a catalyst via chemical vapor transport system [9,10]. Figure 1a shows a SEM image, showing a large quantity of flexible Si NRs on the substrate. Most of the NRs have a thickness between 30 and 40 nm, a width of a few micrometers, and a length of a hundreds of micrometers (Figure 1a, b).


Combinatorial growth of Si nanoribbons.

Park TE, Lee KY, Kim I, Chang J, Voorhees P, Choi HJ - Nanoscale Res Lett (2011)

SEM image of Si NRs. (a) Typical SEM image of Si NRs grown on a Si substrate. (b) SEM images of an individual Si NR.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211989&req=5

Figure 1: SEM image of Si NRs. (a) Typical SEM image of Si NRs grown on a Si substrate. (b) SEM images of an individual Si NR.
Mentions: Si NRs were synthesized on Si substrates assisted by Pt as a catalyst via chemical vapor transport system [9,10]. Figure 1a shows a SEM image, showing a large quantity of flexible Si NRs on the substrate. Most of the NRs have a thickness between 30 and 40 nm, a width of a few micrometers, and a length of a hundreds of micrometers (Figure 1a, b).

Bottom Line: These twins appear to drive the lateral growth by a reentrant twin mechanism.These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction.These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twin-assisted VS mechanism for lateral growth.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea. hjc@yonsei.ac.kr.

ABSTRACT
Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of saw-like edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twin-assisted VS mechanism for lateral growth.

No MeSH data available.