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Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.

Shen Z, Chen Z, Lu Q, Qiu Z, Jiang A, Qu X, Chen Y, Liu R - Nanoscale Res Lett (2011)

Bottom Line: In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer.Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

View Article: PubMed Central - HTML - PubMed

Affiliation: ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China. yifang.chen@stfc.ac.uk.

ABSTRACT
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

No MeSH data available.


Related in: MedlinePlus

Time dependence of the polarization on an embossed region from PUND measurements at room temperature.
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Figure 6: Time dependence of the polarization on an embossed region from PUND measurements at room temperature.

Mentions: Fatigue measurements were done at room temperature using a Radiant Technologies Precision Tester. Both embossed and un-embossed regions were subjected to bipolar square wave voltage cycling with a width of 0.5 μs and period of 1 μs. Figure 5 displays the change in switchable polarization as a function of the number of switching cycles for both embossed and un-embossed regions on the same PZT thin film. It can be seen that un-embossed region is nearly fatigue free through 107 cycles under a voltage of 5 V, while the switchable polarization undergoes a slow decay starting at around 106 switching cycles for the embossed region under the same voltage. This could be attributed to the fact that the polarization of the thinner region in the embossed area was much more switched than the un-embossed region (coercive voltage is approx. 3 V) under the applied voltage, and thus underwent an earlier decay. Indeed, the switchable polarization of the embossed region reached as many as 107 switching cycles with no noticeable decay under a smaller voltage of 3 V. Further study on the fatigue [17-21] of the patterned ferroelectric film capacitor structure is underway. The retention characteristics of an embossed region have been obtained by a PUND method with the pulse width and amplitude of 1 ms and ± 8 V, respectively. Figure 6 shows the time dependence of the polarization, where Ps is the switched polarization between the two opposite pulses and Pr is the remnant polarization. As it can be seen that there is no polarization descending trend observed even after retention time of 3200 s, clearly confirming the excellent polarization phase maintained after the removal of external fields for a long time.


Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.

Shen Z, Chen Z, Lu Q, Qiu Z, Jiang A, Qu X, Chen Y, Liu R - Nanoscale Res Lett (2011)

Time dependence of the polarization on an embossed region from PUND measurements at room temperature.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211987&req=5

Figure 6: Time dependence of the polarization on an embossed region from PUND measurements at room temperature.
Mentions: Fatigue measurements were done at room temperature using a Radiant Technologies Precision Tester. Both embossed and un-embossed regions were subjected to bipolar square wave voltage cycling with a width of 0.5 μs and period of 1 μs. Figure 5 displays the change in switchable polarization as a function of the number of switching cycles for both embossed and un-embossed regions on the same PZT thin film. It can be seen that un-embossed region is nearly fatigue free through 107 cycles under a voltage of 5 V, while the switchable polarization undergoes a slow decay starting at around 106 switching cycles for the embossed region under the same voltage. This could be attributed to the fact that the polarization of the thinner region in the embossed area was much more switched than the un-embossed region (coercive voltage is approx. 3 V) under the applied voltage, and thus underwent an earlier decay. Indeed, the switchable polarization of the embossed region reached as many as 107 switching cycles with no noticeable decay under a smaller voltage of 3 V. Further study on the fatigue [17-21] of the patterned ferroelectric film capacitor structure is underway. The retention characteristics of an embossed region have been obtained by a PUND method with the pulse width and amplitude of 1 ms and ± 8 V, respectively. Figure 6 shows the time dependence of the polarization, where Ps is the switched polarization between the two opposite pulses and Pr is the remnant polarization. As it can be seen that there is no polarization descending trend observed even after retention time of 3200 s, clearly confirming the excellent polarization phase maintained after the removal of external fields for a long time.

Bottom Line: In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer.Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

View Article: PubMed Central - HTML - PubMed

Affiliation: ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China. yifang.chen@stfc.ac.uk.

ABSTRACT
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

No MeSH data available.


Related in: MedlinePlus