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Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.

Shen Z, Chen Z, Lu Q, Qiu Z, Jiang A, Qu X, Chen Y, Liu R - Nanoscale Res Lett (2011)

Bottom Line: In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer.Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

View Article: PubMed Central - HTML - PubMed

Affiliation: ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China. yifang.chen@stfc.ac.uk.

ABSTRACT
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

No MeSH data available.


Related in: MedlinePlus

Hysteresis loops of the embossed region in the voltages of 3 and 5 V, respectively. The same loops obtained from the un-embossed region of the same PZT thin film is obtained under 3 V for comparison.
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Figure 4: Hysteresis loops of the embossed region in the voltages of 3 and 5 V, respectively. The same loops obtained from the un-embossed region of the same PZT thin film is obtained under 3 V for comparison.

Mentions: Figure 4 shows the hysteresis loops of the embossed region under external voltages of 5 and 3 V, respectively, as well as that of the un-embossed region on the same PZT thin film under 3 V for comparison. All of the hysteresis loops under varies voltages were measured from a pre-polarized state. The remnant polarization under 3 V for embossed region is 5.04 μc/cm2, while for un-embossed region is only 1.24 μc/cm2. This suggests two remnant polarization states can be created for '10' and '01' states by switching the polarization of thinner layer at a lower voltage. Correspondingly, when the polarization of whole layer was switched at a higher voltage, another two storage states '11' and '00' are obtained. As illustrated schematically in Figure 4, four storage states can be achieved in the embossed region.


Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.

Shen Z, Chen Z, Lu Q, Qiu Z, Jiang A, Qu X, Chen Y, Liu R - Nanoscale Res Lett (2011)

Hysteresis loops of the embossed region in the voltages of 3 and 5 V, respectively. The same loops obtained from the un-embossed region of the same PZT thin film is obtained under 3 V for comparison.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211987&req=5

Figure 4: Hysteresis loops of the embossed region in the voltages of 3 and 5 V, respectively. The same loops obtained from the un-embossed region of the same PZT thin film is obtained under 3 V for comparison.
Mentions: Figure 4 shows the hysteresis loops of the embossed region under external voltages of 5 and 3 V, respectively, as well as that of the un-embossed region on the same PZT thin film under 3 V for comparison. All of the hysteresis loops under varies voltages were measured from a pre-polarized state. The remnant polarization under 3 V for embossed region is 5.04 μc/cm2, while for un-embossed region is only 1.24 μc/cm2. This suggests two remnant polarization states can be created for '10' and '01' states by switching the polarization of thinner layer at a lower voltage. Correspondingly, when the polarization of whole layer was switched at a higher voltage, another two storage states '11' and '00' are obtained. As illustrated schematically in Figure 4, four storage states can be achieved in the embossed region.

Bottom Line: In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer.Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

View Article: PubMed Central - HTML - PubMed

Affiliation: ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China. yifang.chen@stfc.ac.uk.

ABSTRACT
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

No MeSH data available.


Related in: MedlinePlus