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Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.

Shen Z, Chen Z, Lu Q, Qiu Z, Jiang A, Qu X, Chen Y, Liu R - Nanoscale Res Lett (2011)

Bottom Line: In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer.Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

View Article: PubMed Central - HTML - PubMed

Affiliation: ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China. yifang.chen@stfc.ac.uk.

ABSTRACT
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

No MeSH data available.


Related in: MedlinePlus

Sketch map of multi-bit storage operation and remnant polarization comparison between an embossed and an un-embossed region. (a) Schematically illustration of multi-bit storage operation for embossed regions on a PZT film. (b) Remnant polarization ratio of the embossed and the un-embossed regions in a PZT film in the voltage range from 1 to 10 V.
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Figure 3: Sketch map of multi-bit storage operation and remnant polarization comparison between an embossed and an un-embossed region. (a) Schematically illustration of multi-bit storage operation for embossed regions on a PZT film. (b) Remnant polarization ratio of the embossed and the un-embossed regions in a PZT film in the voltage range from 1 to 10 V.

Mentions: We propose a method for operation of multi-bit storage in embossed regions, which is schematically illustrated in Figure 3a. For instance, after a minus bias -V2, which is larger than the coercive voltage of the thicker film, is added both on the embossed and un-embossed regions, the polarization of the ferroelectric film under electrode pads could be wholly switched upward. Then with a plus voltage V1 applied on, which is smaller than the coercive voltage of the thicker film and larger than the coercive voltage of the thinner film, the polarization of the embossed bottom area can be switched downward. While for the embossed top area and un-embossed region, the polarization still keeps upward. In this way, an additional storage state for embossed region is apparently achieved. Indeed, Figure 3b plots the ratio of the remnant polarization of the embossed region to that of the un-embossed region on the same PZT film under voltages from 1 to 10 V. In the range of small voltages from 1 to 3 V, the polarization of the embossed area is about four times as large as that of the un-embossed region, and, with the voltage increasing to 5 V, the ratio decreases close to 1. This is attributed to the fact that the thinner layer in the embossed area could be more switched than the un-embossed region (coercive voltage is approx. 3 V) under low voltages such as 1 to 3 V. With the voltage rising to 5 V and above, both the embossed region and un-embossed region could be almost switched, and thus the remnant polarization for both regions with the same electrode pad areas (100 × 100 μm square) approaches a similar value.


Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.

Shen Z, Chen Z, Lu Q, Qiu Z, Jiang A, Qu X, Chen Y, Liu R - Nanoscale Res Lett (2011)

Sketch map of multi-bit storage operation and remnant polarization comparison between an embossed and an un-embossed region. (a) Schematically illustration of multi-bit storage operation for embossed regions on a PZT film. (b) Remnant polarization ratio of the embossed and the un-embossed regions in a PZT film in the voltage range from 1 to 10 V.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211987&req=5

Figure 3: Sketch map of multi-bit storage operation and remnant polarization comparison between an embossed and an un-embossed region. (a) Schematically illustration of multi-bit storage operation for embossed regions on a PZT film. (b) Remnant polarization ratio of the embossed and the un-embossed regions in a PZT film in the voltage range from 1 to 10 V.
Mentions: We propose a method for operation of multi-bit storage in embossed regions, which is schematically illustrated in Figure 3a. For instance, after a minus bias -V2, which is larger than the coercive voltage of the thicker film, is added both on the embossed and un-embossed regions, the polarization of the ferroelectric film under electrode pads could be wholly switched upward. Then with a plus voltage V1 applied on, which is smaller than the coercive voltage of the thicker film and larger than the coercive voltage of the thinner film, the polarization of the embossed bottom area can be switched downward. While for the embossed top area and un-embossed region, the polarization still keeps upward. In this way, an additional storage state for embossed region is apparently achieved. Indeed, Figure 3b plots the ratio of the remnant polarization of the embossed region to that of the un-embossed region on the same PZT film under voltages from 1 to 10 V. In the range of small voltages from 1 to 3 V, the polarization of the embossed area is about four times as large as that of the un-embossed region, and, with the voltage increasing to 5 V, the ratio decreases close to 1. This is attributed to the fact that the thinner layer in the embossed area could be more switched than the un-embossed region (coercive voltage is approx. 3 V) under low voltages such as 1 to 3 V. With the voltage rising to 5 V and above, both the embossed region and un-embossed region could be almost switched, and thus the remnant polarization for both regions with the same electrode pad areas (100 × 100 μm square) approaches a similar value.

Bottom Line: In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer.Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

View Article: PubMed Central - HTML - PubMed

Affiliation: ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China. yifang.chen@stfc.ac.uk.

ABSTRACT
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

No MeSH data available.


Related in: MedlinePlus