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Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.

Shen Z, Chen Z, Lu Q, Qiu Z, Jiang A, Qu X, Chen Y, Liu R - Nanoscale Res Lett (2011)

Bottom Line: In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer.Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

View Article: PubMed Central - HTML - PubMed

Affiliation: ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China. yifang.chen@stfc.ac.uk.

ABSTRACT
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

No MeSH data available.


Related in: MedlinePlus

Hysteretic dependence of OPP phase with applied voltage from -10 to 10 V for embossed top (blue) and bottom regions (red).
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Figure 2: Hysteretic dependence of OPP phase with applied voltage from -10 to 10 V for embossed top (blue) and bottom regions (red).

Mentions: Figure 1a illustrates the nano-embossing process of ferroelectric PZT. Figure 1b displays the embossed PZT film profiles measured by AFM; showing an embossed depth of about 160 nm on a 450-nm thick PZT film. It could be seen that well quadrate patterned profiles of the PZT film has been obtained by the nano-embossing process. After crystallization, the morphology of the embossed region remained stable and no collapse was found even after several months. The embossed PZT films were found to be with [111] preferred orientation and a tetragonal structure previously by X-ray diffraction and Raman spectroscopy (not presented here) [13,16], respectively (Additional files 1 and 2). Figure 2 shows the hysteretic dependence of out-of-plane piezoresponse (OPP) phase under a bias from -10 to 10 V. The blue and red curves represent the hysteresis loops of embossed top and bottom areas, respectively. The polarization phase contrast is nearly 180° and the switch voltage of embossed bottom area (thinner layer) is about 1.5 V, approximately 1.5 V smaller than the coercive voltage of embossed top area (thicker layer). Rapid saturations are found at around 3 and 4 V, respectively. This provides convincing evidence of excellent ferroelectricity property of the embossed regions and demonstrates that two distinct coercive voltages can be generated by a one-step embossing process on ferroelectric thin films.


Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.

Shen Z, Chen Z, Lu Q, Qiu Z, Jiang A, Qu X, Chen Y, Liu R - Nanoscale Res Lett (2011)

Hysteretic dependence of OPP phase with applied voltage from -10 to 10 V for embossed top (blue) and bottom regions (red).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211987&req=5

Figure 2: Hysteretic dependence of OPP phase with applied voltage from -10 to 10 V for embossed top (blue) and bottom regions (red).
Mentions: Figure 1a illustrates the nano-embossing process of ferroelectric PZT. Figure 1b displays the embossed PZT film profiles measured by AFM; showing an embossed depth of about 160 nm on a 450-nm thick PZT film. It could be seen that well quadrate patterned profiles of the PZT film has been obtained by the nano-embossing process. After crystallization, the morphology of the embossed region remained stable and no collapse was found even after several months. The embossed PZT films were found to be with [111] preferred orientation and a tetragonal structure previously by X-ray diffraction and Raman spectroscopy (not presented here) [13,16], respectively (Additional files 1 and 2). Figure 2 shows the hysteretic dependence of out-of-plane piezoresponse (OPP) phase under a bias from -10 to 10 V. The blue and red curves represent the hysteresis loops of embossed top and bottom areas, respectively. The polarization phase contrast is nearly 180° and the switch voltage of embossed bottom area (thinner layer) is about 1.5 V, approximately 1.5 V smaller than the coercive voltage of embossed top area (thicker layer). Rapid saturations are found at around 3 and 4 V, respectively. This provides convincing evidence of excellent ferroelectricity property of the embossed regions and demonstrates that two distinct coercive voltages can be generated by a one-step embossing process on ferroelectric thin films.

Bottom Line: In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer.Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

View Article: PubMed Central - HTML - PubMed

Affiliation: ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China. yifang.chen@stfc.ac.uk.

ABSTRACT
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

No MeSH data available.


Related in: MedlinePlus