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High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices.

Zou R, Yu L, Zhang Z, Chen Z, Hu J - Nanoscale Res Lett (2011)

Bottom Line: With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices.Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property.This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China. hu.junqing@dhu.edu.cn.

ABSTRACT
Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices, which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process; and then, as-prepared nano-probes can manipulate nanomaterials including semiconductor/metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

No MeSH data available.


Related in: MedlinePlus

Jointing three ZnS nanowires and current-voltage characteristic curves. (a) Jointing three ZnS nanowires for fabrication a nanodevice. (b) Current-voltage (I/V) characteristic curves of the three ZnS nanowire device recorded by the STM-TEM holder.
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Figure 9: Jointing three ZnS nanowires and current-voltage characteristic curves. (a) Jointing three ZnS nanowires for fabrication a nanodevice. (b) Current-voltage (I/V) characteristic curves of the three ZnS nanowire device recorded by the STM-TEM holder.

Mentions: To study the electrical behavior, a diode nanodevice has been constructed by ZnS nanowires, realized by the nanowire probe manipulation. Here, we designed a device consisting of three vertically oriented ZnS nanowires (Figure 9a) which were linked together and "Z" shaped through a welding process by high energy electron beam irradiation [32,33]. The I-V curves of the fabricated device are plotted according to the I-V data obtained when the voltage is ramped up, as showed in Figure 9b, which are recorded with a voltage ranging from -10 to 10 V for 5,000 ms. ZnS (ZnS: bandgap energy of Ea is approximately 3.66 eV) nanowires with a lower work function than those of Pt (Φ is approximately 5.1 eV) and Au (Φ is approximately 5.65 eV) makes a Schottky contact between Pt and Au. As shown in Figure 9b, eight cycles were performed for this device made of three ZnS nanowires and the I-V curves show typically Schottky characteristic. An excellent stability of ZnS nanowires nanodevice was indicated from the eight circles, and a current value was varied from -2.5 to 3 nA with a voltage ranging from -10 to 10 V, which clearly demonstrates that the electrical resistivity changed very little within each circle. The three contacts to the ZnS nanowires in every heterojunction are found to behave as two diodes connected in series face-to-face, which exhibits the I-V characteristics of a Schottky diode-like characteristic. By comparison, under the same condition as that of the device consisting of three ZnS nanowires (Figure 9), the current of individual ZnS nanowires was varied from -12 to 12 nA, as shown in Figure S2 (in Additional file 1). Thus, the current variation range of individual ZnS nanowires is about four times as large as that of three ZnS nanowires device under the same voltage condition. Two factors may be responsible for an increase of the resistance of three ZnS nanowires' device, i.e., (1) intrinsic resistance of the fabricated device of three ZnS nanowires is larger than that of individual ZnS nanowires; (2) the contact regions between ZnS nanowires has higher electrical resistance, and the resistance of two contact regions brings a small current value. The perfect electrical properties of diode nanodevice demonstrate that it is possible to design nanodevices and complex structures by nanowire-probe manipulation technology.


High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices.

Zou R, Yu L, Zhang Z, Chen Z, Hu J - Nanoscale Res Lett (2011)

Jointing three ZnS nanowires and current-voltage characteristic curves. (a) Jointing three ZnS nanowires for fabrication a nanodevice. (b) Current-voltage (I/V) characteristic curves of the three ZnS nanowire device recorded by the STM-TEM holder.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211986&req=5

Figure 9: Jointing three ZnS nanowires and current-voltage characteristic curves. (a) Jointing three ZnS nanowires for fabrication a nanodevice. (b) Current-voltage (I/V) characteristic curves of the three ZnS nanowire device recorded by the STM-TEM holder.
Mentions: To study the electrical behavior, a diode nanodevice has been constructed by ZnS nanowires, realized by the nanowire probe manipulation. Here, we designed a device consisting of three vertically oriented ZnS nanowires (Figure 9a) which were linked together and "Z" shaped through a welding process by high energy electron beam irradiation [32,33]. The I-V curves of the fabricated device are plotted according to the I-V data obtained when the voltage is ramped up, as showed in Figure 9b, which are recorded with a voltage ranging from -10 to 10 V for 5,000 ms. ZnS (ZnS: bandgap energy of Ea is approximately 3.66 eV) nanowires with a lower work function than those of Pt (Φ is approximately 5.1 eV) and Au (Φ is approximately 5.65 eV) makes a Schottky contact between Pt and Au. As shown in Figure 9b, eight cycles were performed for this device made of three ZnS nanowires and the I-V curves show typically Schottky characteristic. An excellent stability of ZnS nanowires nanodevice was indicated from the eight circles, and a current value was varied from -2.5 to 3 nA with a voltage ranging from -10 to 10 V, which clearly demonstrates that the electrical resistivity changed very little within each circle. The three contacts to the ZnS nanowires in every heterojunction are found to behave as two diodes connected in series face-to-face, which exhibits the I-V characteristics of a Schottky diode-like characteristic. By comparison, under the same condition as that of the device consisting of three ZnS nanowires (Figure 9), the current of individual ZnS nanowires was varied from -12 to 12 nA, as shown in Figure S2 (in Additional file 1). Thus, the current variation range of individual ZnS nanowires is about four times as large as that of three ZnS nanowires device under the same voltage condition. Two factors may be responsible for an increase of the resistance of three ZnS nanowires' device, i.e., (1) intrinsic resistance of the fabricated device of three ZnS nanowires is larger than that of individual ZnS nanowires; (2) the contact regions between ZnS nanowires has higher electrical resistance, and the resistance of two contact regions brings a small current value. The perfect electrical properties of diode nanodevice demonstrate that it is possible to design nanodevices and complex structures by nanowire-probe manipulation technology.

Bottom Line: With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices.Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property.This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China. hu.junqing@dhu.edu.cn.

ABSTRACT
Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices, which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process; and then, as-prepared nano-probes can manipulate nanomaterials including semiconductor/metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

No MeSH data available.


Related in: MedlinePlus