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High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices.

Zou R, Yu L, Zhang Z, Chen Z, Hu J - Nanoscale Res Lett (2011)

Bottom Line: With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices.Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property.This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China. hu.junqing@dhu.edu.cn.

ABSTRACT
Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices, which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process; and then, as-prepared nano-probes can manipulate nanomaterials including semiconductor/metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

No MeSH data available.


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Manipulating ultrathin Au nanowire by the ZnS nanowire probe. (a) Approaching ultrathin Au nanowire. (b) Electrostatic force launched by a DC bias voltage. (c) Moving ultrathin Au nanowire. (d) placing ultrathin Au nanowire at a desired position.
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Figure 8: Manipulating ultrathin Au nanowire by the ZnS nanowire probe. (a) Approaching ultrathin Au nanowire. (b) Electrostatic force launched by a DC bias voltage. (c) Moving ultrathin Au nanowire. (d) placing ultrathin Au nanowire at a desired position.

Mentions: Sequential TEM images illustrate the process of manipulating low-melting point metal Sn nanoparticle (approximately 100 nm in diameter) with the nanowire probe of the ZnS semiconductor (Figure 7) [30]. The as-prepared nanowire probe has a diameter of approximately 32 nm near the cap. These Sn nanoparticles (with 50 nm in diameter) are dispersed onto Au cantilever (Figure 7a). As shown in Figure 7b, the as-fabricated nanowire probe approaches to Sn particle, then the electrostatic force is launched between the nanowire probe and a Sn particle on Au cantilever by applying 8 V DC bias voltage. The Sn particle is adsorbed on the probe when the nanowire probe connects the Sn particle. The adhering of the junction between the target Sn particle and probe has been further improved by moving the probe back and forth, (by changing ZnS nanowire probe through TEM-STM), and then manipulated from the Au cantilever (Figure 7c). Finally, after the Sn particle is precisely put at the desired location, the DC bias voltage is unloaded by the dedicated software (Figure 7d). We would like to clarify key points that can be deduced from the above experiments shown in Movie 3 (in Additional file 2). The Sn particle is structurally and functionally undamaged, or no welding occurred between the Sn particle and ZnS nanowire probe, even under the conditions of atom migration from Joule heating and electromigration in high current. By the same method, ultrathin Au nanowires have also been successfully manipulated, as shown in Figure 8. Figure 8a shows the movement of Au nanowires (also see experimental section in Additional file 1) (with approximately 10 nm diameter) on Au cantilever [31]. A gentle mechanical force pushed by the nanowire probe was exerted to the tip of Au nanowire, controlled by TEM-STM manipulator. A 4-V DC bias voltage is applied between the nanowire probe and ultrathin Au nanowire, and then, an electrostatic force is generated. The selected Au nanowire is then lifted from the substrate by the electrostatic force (Figure 8b), and is carefully moved by the TEM-STM manipulator (Figure 8c). The DC bias voltage is unloaded by the software after the nanowire is placed at the designated position (Figure 8d) (also see Movie 4 in Additional file 2). Interestingly, although the diffusion barrier of a single metal atom on ultrathin metal surface is quite low, no welding happens between ultrathin Au nanowire and ZnS nanowire probe by atom migration due to Joule heating. So, it is concluded that both low-melting point metals and ultrathin metal nanowires are easily manipulated by our fabricated semiconductor nanowire probe.


High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices.

Zou R, Yu L, Zhang Z, Chen Z, Hu J - Nanoscale Res Lett (2011)

Manipulating ultrathin Au nanowire by the ZnS nanowire probe. (a) Approaching ultrathin Au nanowire. (b) Electrostatic force launched by a DC bias voltage. (c) Moving ultrathin Au nanowire. (d) placing ultrathin Au nanowire at a desired position.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211986&req=5

Figure 8: Manipulating ultrathin Au nanowire by the ZnS nanowire probe. (a) Approaching ultrathin Au nanowire. (b) Electrostatic force launched by a DC bias voltage. (c) Moving ultrathin Au nanowire. (d) placing ultrathin Au nanowire at a desired position.
Mentions: Sequential TEM images illustrate the process of manipulating low-melting point metal Sn nanoparticle (approximately 100 nm in diameter) with the nanowire probe of the ZnS semiconductor (Figure 7) [30]. The as-prepared nanowire probe has a diameter of approximately 32 nm near the cap. These Sn nanoparticles (with 50 nm in diameter) are dispersed onto Au cantilever (Figure 7a). As shown in Figure 7b, the as-fabricated nanowire probe approaches to Sn particle, then the electrostatic force is launched between the nanowire probe and a Sn particle on Au cantilever by applying 8 V DC bias voltage. The Sn particle is adsorbed on the probe when the nanowire probe connects the Sn particle. The adhering of the junction between the target Sn particle and probe has been further improved by moving the probe back and forth, (by changing ZnS nanowire probe through TEM-STM), and then manipulated from the Au cantilever (Figure 7c). Finally, after the Sn particle is precisely put at the desired location, the DC bias voltage is unloaded by the dedicated software (Figure 7d). We would like to clarify key points that can be deduced from the above experiments shown in Movie 3 (in Additional file 2). The Sn particle is structurally and functionally undamaged, or no welding occurred between the Sn particle and ZnS nanowire probe, even under the conditions of atom migration from Joule heating and electromigration in high current. By the same method, ultrathin Au nanowires have also been successfully manipulated, as shown in Figure 8. Figure 8a shows the movement of Au nanowires (also see experimental section in Additional file 1) (with approximately 10 nm diameter) on Au cantilever [31]. A gentle mechanical force pushed by the nanowire probe was exerted to the tip of Au nanowire, controlled by TEM-STM manipulator. A 4-V DC bias voltage is applied between the nanowire probe and ultrathin Au nanowire, and then, an electrostatic force is generated. The selected Au nanowire is then lifted from the substrate by the electrostatic force (Figure 8b), and is carefully moved by the TEM-STM manipulator (Figure 8c). The DC bias voltage is unloaded by the software after the nanowire is placed at the designated position (Figure 8d) (also see Movie 4 in Additional file 2). Interestingly, although the diffusion barrier of a single metal atom on ultrathin metal surface is quite low, no welding happens between ultrathin Au nanowire and ZnS nanowire probe by atom migration due to Joule heating. So, it is concluded that both low-melting point metals and ultrathin metal nanowires are easily manipulated by our fabricated semiconductor nanowire probe.

Bottom Line: With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices.Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property.This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China. hu.junqing@dhu.edu.cn.

ABSTRACT
Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices, which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process; and then, as-prepared nano-probes can manipulate nanomaterials including semiconductor/metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

No MeSH data available.


Related in: MedlinePlus