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High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices.

Zou R, Yu L, Zhang Z, Chen Z, Hu J - Nanoscale Res Lett (2011)

Bottom Line: With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices.Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property.This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China. hu.junqing@dhu.edu.cn.

ABSTRACT
Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices, which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process; and then, as-prepared nano-probes can manipulate nanomaterials including semiconductor/metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

No MeSH data available.


Related in: MedlinePlus

Experimental setup and ZnS nanowire nano-probe. (a) Schematics of the experimental setup within a STM-TEM holder. (b) The tapered ZnS nanowire nano-probe. (c) The ZnS nanowire nano-probe bridged between the Au and Pt cantilevers.
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Figure 2: Experimental setup and ZnS nanowire nano-probe. (a) Schematics of the experimental setup within a STM-TEM holder. (b) The tapered ZnS nanowire nano-probe. (c) The ZnS nanowire nano-probe bridged between the Au and Pt cantilevers.

Mentions: The nano-probe preparation is performed using the STM-TEM holder within a 200-kV HRTEM. An experimental setup is sketched in Figure 2a. An Au cantilever is attached to a fixed electrical sensor, whereas a Pt cantilever with an amount of as-grown tapered ZnS nanowires is placed on the piezo-movable side of the holder. At the beginning, the relative positions of two cantilevers are manually adjusted with tweezers under an optical microscope to get a minimal possible gap between them. Then, the X, Y, and Z positions of the Au cantilever and individual tapered ZnS nanowires are adjusted through the nanoscale precision piezo-driven manipulator of STM-TEM holder, to make a tapered ZnS nanowire bridge between two cantilevers. On the basis of the classical electricity, the electrical properties of this bridged ZnS nanowire have been evaluated by the dedicated software and electronics from Nanofactory Instruments AB. An individual tapered ZnS nanowire (tipped with a spherical Sn particle) is built to serve as nano-probe. The tipped Sn particle on the thicker end of ZnS nanowire contacts with the Pt cantilever, whereas the thinner end of this ZnS nanowire contacts the Au cantilever, followed by applying a bias voltage of approximately 10 V. Once a current passes through this Sn-tipped ZnS nanowire, because of a resistance of the contact point between the Sn particle and the Pt cantilever, a local temperature increase due to Joule heating can be generated. It is known that the melting point of nanostructured materials can be much lower than that of their bulky counterparts (for example, the difference between the melting point of Au nanoparticles and Au bulk material is over 400°C) [19-21]. So, it is reasonable to assume that the melting point of the Sn nanoparticle is also lower than that of a Sn bulky material (bulk Sn: m.p. of 232°C) [22]. Consequently, the Sn particle may entirely melt (even though the melting point of bulk Sn is far above the room temperature) at a very low basic pressure (approximately 1 × 10-5 Pa) in the TEM chamber. This leads to a successful welding of the spherical Sn particle onto the Pt cantilever and the thicker end of the ZnS nanowire part, while the thinner end of the ZnS nanowire and the Au cantilever are keeping a perfect physical contact. As a result, the ZnS nanowire nano-probe has been realized when the Sn welding is solidified with the bias voltage unloaded and the local temperature decreased, as shown in Figure 2b. Shown in Figure 2c is the ZnS nanowire nano-probe bridged between the Au and Pt cantilevers.


High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices.

Zou R, Yu L, Zhang Z, Chen Z, Hu J - Nanoscale Res Lett (2011)

Experimental setup and ZnS nanowire nano-probe. (a) Schematics of the experimental setup within a STM-TEM holder. (b) The tapered ZnS nanowire nano-probe. (c) The ZnS nanowire nano-probe bridged between the Au and Pt cantilevers.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211986&req=5

Figure 2: Experimental setup and ZnS nanowire nano-probe. (a) Schematics of the experimental setup within a STM-TEM holder. (b) The tapered ZnS nanowire nano-probe. (c) The ZnS nanowire nano-probe bridged between the Au and Pt cantilevers.
Mentions: The nano-probe preparation is performed using the STM-TEM holder within a 200-kV HRTEM. An experimental setup is sketched in Figure 2a. An Au cantilever is attached to a fixed electrical sensor, whereas a Pt cantilever with an amount of as-grown tapered ZnS nanowires is placed on the piezo-movable side of the holder. At the beginning, the relative positions of two cantilevers are manually adjusted with tweezers under an optical microscope to get a minimal possible gap between them. Then, the X, Y, and Z positions of the Au cantilever and individual tapered ZnS nanowires are adjusted through the nanoscale precision piezo-driven manipulator of STM-TEM holder, to make a tapered ZnS nanowire bridge between two cantilevers. On the basis of the classical electricity, the electrical properties of this bridged ZnS nanowire have been evaluated by the dedicated software and electronics from Nanofactory Instruments AB. An individual tapered ZnS nanowire (tipped with a spherical Sn particle) is built to serve as nano-probe. The tipped Sn particle on the thicker end of ZnS nanowire contacts with the Pt cantilever, whereas the thinner end of this ZnS nanowire contacts the Au cantilever, followed by applying a bias voltage of approximately 10 V. Once a current passes through this Sn-tipped ZnS nanowire, because of a resistance of the contact point between the Sn particle and the Pt cantilever, a local temperature increase due to Joule heating can be generated. It is known that the melting point of nanostructured materials can be much lower than that of their bulky counterparts (for example, the difference between the melting point of Au nanoparticles and Au bulk material is over 400°C) [19-21]. So, it is reasonable to assume that the melting point of the Sn nanoparticle is also lower than that of a Sn bulky material (bulk Sn: m.p. of 232°C) [22]. Consequently, the Sn particle may entirely melt (even though the melting point of bulk Sn is far above the room temperature) at a very low basic pressure (approximately 1 × 10-5 Pa) in the TEM chamber. This leads to a successful welding of the spherical Sn particle onto the Pt cantilever and the thicker end of the ZnS nanowire part, while the thinner end of the ZnS nanowire and the Au cantilever are keeping a perfect physical contact. As a result, the ZnS nanowire nano-probe has been realized when the Sn welding is solidified with the bias voltage unloaded and the local temperature decreased, as shown in Figure 2b. Shown in Figure 2c is the ZnS nanowire nano-probe bridged between the Au and Pt cantilevers.

Bottom Line: With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices.Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property.This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China. hu.junqing@dhu.edu.cn.

ABSTRACT
Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices, which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process; and then, as-prepared nano-probes can manipulate nanomaterials including semiconductor/metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

No MeSH data available.


Related in: MedlinePlus